GWself-energy calculations of carrier-induced band-gap narrowing inn-type silicon

1995 ◽  
Vol 51 (3) ◽  
pp. 1527-1535 ◽  
Author(s):  
A. Oschlies ◽  
R. W. Godby ◽  
R. J. Needs
Keyword(s):  
Band Gap ◽  
Energy Calculations ◽  
Type Silicon ◽  
Band Gap Narrowing

First-principles self-energy calculations of carrier-induced band-gap narrowing in silicon

1992 ◽  
Vol 45 (23) ◽  
pp. 13741-13744 ◽  
Author(s):  
A. Oschlies ◽  
R. W. Godby ◽  
R. J. Needs
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Energy Calculations ◽  
Self Energy ◽  
Band Gap Narrowing

Dielectric response inp-type silicon: Screening and band-gap narrowing

1993 ◽  
Vol 47 (19) ◽  
pp. 12532-12539 ◽  
Author(s):  
L. R. Logan ◽  
J. L. Egley
Keyword(s):  
Band Gap ◽  
Dielectric Response ◽  
Type Silicon ◽  
Band Gap Narrowing

Band-gap narrowing and potential fluctuation in Si-doped GaN

1999 ◽  
Vol 74 (1) ◽  
pp. 102-104 ◽  
Author(s):  
In-Hwan Lee ◽  
J. J. Lee ◽  
P. Kung ◽  
F. J. Sanchez ◽  
M. Razeghi
Keyword(s):  
Band Gap ◽  
Potential Fluctuation ◽  
Si Doped ◽  
Band Gap Narrowing

Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si

2002 ◽  
Vol 33 (4) ◽  
pp. 365-369 ◽  
Author(s):  
C. Moysés Araújo ◽  
J.R.L. Fernandez ◽  
A. Ferreira da Silva ◽  
I. Pepe ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Band Gap ◽  
Band Gap Narrowing

Effect of tungsten doping on structural and optical properties of rutile TiO2 and band gap narrowing

Optik ◽  
2019 ◽  
Vol 182 ◽  
pp. 538-547 ◽  
Author(s):  
Jasvir Singh ◽  
Shivani Sharma ◽  
Sandeep Sharma ◽  
Ravi Chand Singh
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Structural And Optical Properties ◽  
Rutile Tio2 ◽  
Band Gap Narrowing ◽  
Tungsten Doping

THE EFFECT OF HIGH N-DOPED ANATASE TiO2 ON THE BAND GAP NARROWING AND REDSHIFT BY FIRST-PRINCIPLES

2012 ◽  
Vol 26 (27) ◽  
pp. 1250179 ◽  
Author(s):  
QINGYU HOU ◽  
YONGJUN JIN ◽  
CHUN YING ◽  
ERJUN ZHAO ◽  
YUE ZHANG ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Formation Energy ◽  
Doping Concentration ◽  
Covalent Bond ◽  
Anatase Tio2 ◽  
Structure Population ◽  
Densities Of States ◽  
N Doping ◽  
Band Gap Narrowing

Anatase TiO 2 supercells were studied by first-principles, in which one was undoped and another three were high N -doping. Partial densities of states, band structure, population and absorption spectrum were calculated. The calculated results indicated that in the condition of TiO 2-x N x (x = 0.0625, 0.125, 0.25), the higher the doping concentration is, the shorter will be the lattice parameters parallel to the direction of c-axis. The strength of covalent bond significantly varied. The formation energy increases at first, and then decreases. The doping models become less stable as N -doping concentration increases. Meanwhile, the narrower the band gap is, the more significant will be the redshift, which is in agreement with the experimental results.

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