Effect of band‐gap narrowing on the built‐in electric field in n‐type silicon

1981 ◽  
Vol 52 (2) ◽  
pp. 1121-1123 ◽  
Author(s):  
Jon Geist ◽  
J. R. Lowney
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Type Silicon ◽  
Band Gap Narrowing

GWself-energy calculations of carrier-induced band-gap narrowing inn-type silicon

1995 ◽  
Vol 51 (3) ◽  
pp. 1527-1535 ◽  
Author(s):  
A. Oschlies ◽  
R. W. Godby ◽  
R. J. Needs
Keyword(s):  
Band Gap ◽  
Energy Calculations ◽  
Type Silicon ◽  
Band Gap Narrowing

Dielectric response inp-type silicon: Screening and band-gap narrowing

1993 ◽  
Vol 47 (19) ◽  
pp. 12532-12539 ◽  
Author(s):  
L. R. Logan ◽  
J. L. Egley
Keyword(s):  
Band Gap ◽  
Dielectric Response ◽  
Type Silicon ◽  
Band Gap Narrowing

Band-gap engineering of the h-BN/MoS2/h-BN sandwich heterostructure under an external electric field

2015 ◽  
Vol 48 (20) ◽  
pp. 205302 ◽  
Author(s):  
Zongyu Huang ◽  
Xiang Qi ◽  
Hong Yang ◽  
Chaoyu He ◽  
Xiaolin Wei ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
External Electric Field ◽  
Band Gap Engineering

Band-gap narrowing and potential fluctuation in Si-doped GaN

1999 ◽  
Vol 74 (1) ◽  
pp. 102-104 ◽  
Author(s):  
In-Hwan Lee ◽  
J. J. Lee ◽  
P. Kung ◽  
F. J. Sanchez ◽  
M. Razeghi
Keyword(s):  
Band Gap ◽  
Potential Fluctuation ◽  
Si Doped ◽  
Band Gap Narrowing

Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si

2002 ◽  
Vol 33 (4) ◽  
pp. 365-369 ◽  
Author(s):  
C. Moysés Araújo ◽  
J.R.L. Fernandez ◽  
A. Ferreira da Silva ◽  
I. Pepe ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Band Gap ◽  
Band Gap Narrowing

Tunable band gap of graphyne-based homo- and hetero-structures by stacking sequences, strain and electric field

2018 ◽  
Vol 20 (42) ◽  
pp. 26934-26946 ◽  
Author(s):  
Jiangni Yun ◽  
Yanni Zhang ◽  
Yanbing Ren ◽  
Manzhang Xu ◽  
Junfeng Yan ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Structures ◽  
Vertical Electric Field ◽  
Tunable Band Gap ◽  
External Strain

Stacking sequences, external strain and a vertical electric field can be used to effectively modulate the electronic structures of graphyne-based homo- and hetero-structures.

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