Dielectric response inp-type silicon: Screening and band-gap narrowing

1993 ◽  
Vol 47 (19) ◽  
pp. 12532-12539 ◽  
Author(s):  
L. R. Logan ◽  
J. L. Egley
Keyword(s):  
Band Gap ◽  
Dielectric Response ◽  
Type Silicon ◽  
Band Gap Narrowing

GWself-energy calculations of carrier-induced band-gap narrowing inn-type silicon

1995 ◽  
Vol 51 (3) ◽  
pp. 1527-1535 ◽  
Author(s):  
A. Oschlies ◽  
R. W. Godby ◽  
R. J. Needs
Keyword(s):  
Band Gap ◽  
Energy Calculations ◽  
Type Silicon ◽  
Band Gap Narrowing

Band-gap narrowing and potential fluctuation in Si-doped GaN

1999 ◽  
Vol 74 (1) ◽  
pp. 102-104 ◽  
Author(s):  
In-Hwan Lee ◽  
J. J. Lee ◽  
P. Kung ◽  
F. J. Sanchez ◽  
M. Razeghi
Keyword(s):  
Band Gap ◽  
Potential Fluctuation ◽  
Si Doped ◽  
Band Gap Narrowing

Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si

2002 ◽  
Vol 33 (4) ◽  
pp. 365-369 ◽  
Author(s):  
C. Moysés Araújo ◽  
J.R.L. Fernandez ◽  
A. Ferreira da Silva ◽  
I. Pepe ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Band Gap ◽  
Band Gap Narrowing

Effect of tungsten doping on structural and optical properties of rutile TiO2 and band gap narrowing

Optik ◽  
2019 ◽  
Vol 182 ◽  
pp. 538-547 ◽  
Author(s):  
Jasvir Singh ◽  
Shivani Sharma ◽  
Sandeep Sharma ◽  
Ravi Chand Singh
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Structural And Optical Properties ◽  
Rutile Tio2 ◽  
Band Gap Narrowing ◽  
Tungsten Doping

THE EFFECT OF HIGH N-DOPED ANATASE TiO2 ON THE BAND GAP NARROWING AND REDSHIFT BY FIRST-PRINCIPLES

2012 ◽  
Vol 26 (27) ◽  
pp. 1250179 ◽  
Author(s):  
QINGYU HOU ◽  
YONGJUN JIN ◽  
CHUN YING ◽  
ERJUN ZHAO ◽  
YUE ZHANG ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Formation Energy ◽  
Doping Concentration ◽  
Covalent Bond ◽  
Anatase Tio2 ◽  
Structure Population ◽  
Densities Of States ◽  
N Doping ◽  
Band Gap Narrowing

Anatase TiO 2 supercells were studied by first-principles, in which one was undoped and another three were high N -doping. Partial densities of states, band structure, population and absorption spectrum were calculated. The calculated results indicated that in the condition of TiO 2-x N x (x = 0.0625, 0.125, 0.25), the higher the doping concentration is, the shorter will be the lattice parameters parallel to the direction of c-axis. The strength of covalent bond significantly varied. The formation energy increases at first, and then decreases. The doping models become less stable as N -doping concentration increases. Meanwhile, the narrower the band gap is, the more significant will be the redshift, which is in agreement with the experimental results.

scholarly journals Band Gap Narrowıng of Mg1-xCuxO Nanostructured Materials

2020 ◽  
Vol 1535 ◽  
pp. 012023
Author(s):  
Nurhanna Badar ◽  
Norlıda Kamarulzaman ◽  
Nor Fadılah Chayed ◽  
Kelımah Elong ◽  
Ri Hanum Yahaya Subban
Keyword(s):  
Band Gap ◽  
Nanostructured Materials ◽  
Band Gap Narrowing
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