scholarly journals Time-resolved electron-temperature measurement in a highly excited gold target using femtosecond thermionic emission

1994 ◽  
Vol 50 (11) ◽  
pp. 8016-8019 ◽  
Author(s):  
X. Y. Wang ◽  
D. M. Riffe ◽  
Y.-S. Lee ◽  
M. C. Downer
Keyword(s):  
Electron Temperature ◽  
Temperature Measurement ◽  
Thermionic Emission ◽  
Gold Target ◽  
Time Resolved

Electron temperature measurement and performance of a nonequilibrium disk MHD generator

1997 ◽  
Vol 120 (1) ◽  
pp. 16-22 ◽  
Author(s):  
Tomoyuki Murakami ◽  
Tetsuya Suekane ◽  
Kiyoshi Tsuji ◽  
Yoshihiro Okuno ◽  
Yasuo Hasegawa ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Temperature Measurement ◽  
Mhd Generator ◽  
And Performance

Electron Temperature Measurement in a Premixed Flat Flame Using the Double Probe Method

2012 ◽  
Vol 52 (8) ◽  
pp. 692-698 ◽  
Author(s):  
J. Wild ◽  
P. Kudrna ◽  
M. Tichý ◽  
V. Nevrlý ◽  
M. Střižík ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Temperature Measurement ◽  
Probe Method ◽  
Double Probe ◽  
Flat Flame

Congruent Melting Temperatures of Si-As Alloys Measured During Pulsed-Laser Melting and Rapid Solidification

1992 ◽  
Vol 279 ◽  
Author(s):  
J. A. Kittl ◽  
R. Reitano ◽  
M. J. Aziz ◽  
D. P. Brunco ◽  
M. O. Thompson
Keyword(s):  
Partition Coefficient ◽  
Temperature Measurement ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Heat Of Fusion ◽  
Interface Temperature ◽  
Congruent Melting ◽  
Laser Melting ◽  
Time Resolved ◽  
Melting Temperatures

ABSTRACTThe solidification of Si-As alloys induced by pulsed laser melting was studied at regrowth velocities where the partition coefficient is close to unity. The congruent melting temperatures, TO, of Si-As alloys were determined using a temperature measurement technique developed for this work, and were confirmed with TOmeasurements using three other methods. The time-resolved temperature measurement uses a thin-film platinum thermistor, below and electrically isolated from the Si-As alloy layer, to directly measure the temperature during solidification. This, combined with measurements of transient conductance of the Si-As alloy, time-resolved reflectivity and Rutherford Backscattering Spectrometry, permitted the determination of the solid-liquid interface temperature, velocity and partition coefficient, the latent heat of fusion and TO for Si - 4.5 at. % As and Si - 9 at. % As alloys.

Electron Temperature Measurement in IR-T1 Tokamak by ECE Diagnostic

2009 ◽  
Vol 29 (1) ◽  
pp. 70-72 ◽  
Author(s):  
M. Ghoranneviss ◽  
R. Shariatzadeh ◽  
P. Khorshid
Keyword(s):  
Electron Temperature ◽  
Temperature Measurement

Time-Resolved Surface Temperature Measurement of MALDI Matrices under Pulsed UV Laser Irradiation

2004 ◽  
Vol 108 (13) ◽  
pp. 2405-2410 ◽  
Author(s):  
Antonis Koubenakis ◽  
Vladimir Frankevich ◽  
Juan Zhang ◽  
Renato Zenobi
Keyword(s):  
Surface Temperature ◽  
Temperature Measurement ◽  
Laser Irradiation ◽  
Uv Laser ◽  
Time Resolved ◽  
Surface Temperature Measurement
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