scholarly journals Effective Electron Temperature Measurement Using Time-Resolved Anti-Stokes Photoluminescence

2020 ◽  
Vol 124 (34) ◽  
pp. 6968-6976 ◽  
Author(s):  
Thomas Jollans ◽  
Martín Caldarola ◽  
Yonatan Sivan ◽  
Michel Orrit
Keyword(s):  
Electron Temperature ◽  
Temperature Measurement ◽  
Time Resolved ◽  
Effective Electron ◽  
Effective Electron Temperature ◽  
Anti Stokes

scholarly journals EFFECTS OF ARGON ATOMS IN EXCITED STATES ON PROPERTIES OF ARGON-ACETYLENE DUSTY PLASMA

2020 ◽  
pp. 26-29
Author(s):  
I.B. Denysenko ◽  
S. Ivko ◽  
N.A. Azarenkov ◽  
G. Burmaka
Keyword(s):  
Electron Temperature ◽  
Dusty Plasma ◽  
Excited States ◽  
Plasma Volume ◽  
Numerical Calculations ◽  
Dust Particles ◽  
Neutral Species ◽  
Effective Electron ◽  
Effective Electron Temperature ◽  
Averaged Model

It is studied how dissociation and ionization of acetylene molecules in their collisions with argon atoms in excited states Ar* may affect properties of argon-acetylene plasma with growing inside of plasma volume dust particles. The study is carried out using a volume-averaged model. To analyze the effects of Ar* atoms on the electron and ion densities, the effective electron temperature and the densities of radical and nonradical neutral species, the values of ionization and dissociation rates for collisions of acetylene molecules with Ar* atoms are varied in numerical calculations. It is found that the collisions of Ar* atoms with acetylene molecules affect essentially the argon-acetylene dusty plasma.

Nonlinear transport and fluctuation characteristics of doped semiconductors

1998 ◽  
Vol 2 ◽  
pp. 35-42
Author(s):  
R. Katilius ◽  
J. Liberis ◽  
A. Matulionis ◽  
R. Raguotis ◽  
P. Sakalas
Keyword(s):  
Electron Temperature ◽  
Electric Fields ◽  
Diffusion Coefficients ◽  
Fluctuation Phenomena ◽  
Nonlinear Transport ◽  
Doped Semiconductors ◽  
Effective Electron ◽  
Temperature Electron ◽  
Effective Electron Temperature ◽  
Transfer Direction

Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced by interelectron scattering, are interpreted in terms of effective electron temperature. Electron Fick’s diffusion coefficients in longitudinal and transfer direction are estimated.

scholarly journals Piezoelectric interaction in controlling the effective electron temperature and the non-ohmic mobility characteristics in GaN and other III–V compounds at low lattice temperature

2017 ◽  
Vol 95 (2) ◽  
pp. 167-172 ◽  
Author(s):  
B. Das ◽  
A. Basu ◽  
J. Das ◽  
D.P. Bhattacharya
Keyword(s):  
Electron Temperature ◽  
Electrical Transport ◽  
Lattice Temperature ◽  
Relative Importance ◽  
Free Electrons ◽  
Effective Electron ◽  
Field Dependent ◽  
Indium Compounds ◽  
Effective Electron Temperature ◽  
Electrical Nonlinearity

In a compound semiconductor that lacks inversion symmetry, the free electrons interact simultaneously with the piezoelectric and acoustic phonons. This combined interaction principally controls the electrical transport at low lattice temperatures. Again, at low temperatures, the electrons in some of the compounds may be significantly perturbed for comparatively low fields, say, even for a fraction of a Vcm−1 or so, which effectively seems to be high enough, and the material exhibits electrical nonlinearity. Such a perturbed ensemble then attains a field dependent effective electron temperature Te, which exceeds the lattice temperature TL. The relative importance of the piezoelectric interaction in controlling the field dependence of the effective electron temperature, and therefrom, the non-ohmic mobility characteristics have been analyzed here under the condition of low lattice temperature. The numerical results obtained for InSb, InAs, and GaN are studied in detail. When compared with the experiments, the results here seem to give the same qualitative picture with respect to the variation of the non-ohmic mobility with the electric field for the indium compounds. The results, being interesting, stimulate further work in the same field.

scholarly journals Evidence of enhanced effective hot electron temperatures in ultraintense laser-solid interactions due to reflexing

2005 ◽  
Vol 23 (4) ◽  
pp. 411-416 ◽  
Author(s):  
HUI CHEN ◽  
SCOTT C. WILKS
Keyword(s):  
Electron Temperature ◽  
Pulse Length ◽  
Thick Target ◽  
Intense Laser ◽  
Hot Electron ◽  
Effective Electron ◽  
Simple Theoretical Model ◽  
Effective Electron Temperature ◽  
Laser Solid Interactions ◽  
Laser Pulse Length

It is shown that the effective hot electron temperature, Thot, associated with the energetic electrons produced during the interaction of an ultra-intense laser with thin solid targets is dependent on the thickness of the target. We report the first direct experimental observations of electron energy spectra obtained from laser-solid interactions that indicates the reflexing of electrons in thin targets results in higher electron temperatures than those obtained in thick target interactions. This can occur for targets whose thickness, xt, is less than about half the range of an electron at the energy associated with the initial effective electron temperature, provided the laser pulse length is at least cτp > 2xt. A simple theoretical model that demonstrates the physical mechanism behind this enhanced heating is presented and the results of computer simulations are used to verify the model.

Effect of q-non-extensive distribution of electrons on the plasma sheath floating potential

2014 ◽  
Vol 80 (4) ◽  
pp. 607-618 ◽  
Author(s):  
M. Sharifian ◽  
H. R. Sharifinejad ◽  
M. Borhani Zarandi ◽  
A. R. Niknam
Keyword(s):  
Electron Temperature ◽  
Electron Distribution ◽  
Plasma Sheath ◽  
The Other ◽  
Floating Potential ◽  
Effective Electron ◽  
Debye Shielding ◽  
Unmagnetized Plasma ◽  
Sheath Phenomena ◽  
Effective Electron Temperature

In this paper, a collisionless unmagnetized plasma sheath consisting of electrons following non-extensive q-distribution, and cold mobile inertial ions is studied in the stationary state. In this type of plasma with non-Maxwellian electron distribution (Tsallis statistical mechanics), the effective electron temperature (Te, eff) and electron screening temperature (Te,*) are evaluated. The other plasma sheath phenomena such as the Bohm sheath criterion, Debye shielding, floating potential, and sheath length are investigated in the presence of q-non-extensive velocity-distributed electrons. It is observed that above-mentioned phenomena depend significantly on the non-extensive parameter q.

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