Raman-line-shape study ofInxGa1−xAs on InP and GaAs substrates

1994 ◽  
Vol 50 (3) ◽  
pp. 1678-1683 ◽  
Author(s):  
J. L. Shen ◽  
I. M. Chang ◽  
Y. M. Shu ◽  
Y. F. Chen ◽  
S. Z. Chang ◽  
...  
Keyword(s):  
Raman Line ◽  
Line Shape ◽  
Gaas Substrates

Critical Raman line shape behavior of fluid nitrogen

2004 ◽  
Vol 76 (1) ◽  
pp. 147-155 ◽  
Author(s):  
M. Musso ◽  
F. Matthai ◽  
D. Keutel ◽  
K.-L. Oehme
Keyword(s):  
Raman Line ◽  
Line Shape ◽  
Line Broadening ◽  
Vibrational Resonance ◽  
Critical Isochore ◽  
Molecular Fluids ◽  
Detection Techniques ◽  
Gas Phases ◽  
Line Shapes ◽  
Band Position

Isotropic Raman line shapes of simple molecular fluids exhibit critical line broadening near their respective liquid-gas critical points. In order to observe this phenomenon, it is essential that the band position of a given vibrational mode is density-dependent, and that vibrational depopulation processes negligibly contribute to line broadening. Special attention was given to the fact that the isotropic (i.e., nonrotationally broadened) line shape of liquid N2 is affected by resonant intermolecular vibrational interactions between identical oscillators. By means of the well-chosen isotopic mixture (14N2).975 - (14N15N).025, the temperature and density dependences of shift, width, and asymmetry of the resonantly coupled 14N2 and, depending on the S/N ratio available, of the resonantly uncoupled 14N15N were determined, with up to milli-Kelvin resolution, in the coexisting liquid and gas phases and along the critical isochore, using a highest-resolution double monochromator and modern charge-coupled device detection techniques. Clear evidence was found that vibrational resonance couplings are present in all dense phases studied.

Polaritons in tetragonal BaTiO3; Theory of the Raman line shape

1970 ◽  
Vol 8 (17) ◽  
pp. 1387-1393 ◽  
Author(s):  
H.J. Benson ◽  
D.L. Mills
Keyword(s):  
Raman Line ◽  
Line Shape

scholarly journals Size dependence of Raman line-shape parameters due to confined phonons in silicon nanowires

2020 ◽  
Vol 6 (4) ◽  
pp. 669-676 ◽  
Author(s):  
Km Neeshu ◽  
Chanchal Rani ◽  
Ritika Kaushik ◽  
Manushree Tanwar ◽  
Devesh Pathak ◽  
...  
Keyword(s):  
Raman Line ◽  
Silicon Nanowires ◽  
Line Shape ◽  
Size Dependence ◽  
Shape Parameters ◽  
Confined Phonons

scholarly journals Interplay between phonon confinement and Fano effect on Raman line shape for semiconductor nanostructures: Analytical study

2016 ◽  
Vol 230 ◽  
pp. 25-29 ◽  
Author(s):  
Priyanka Yogi ◽  
Shailendra K. Saxena ◽  
Suryakant Mishra ◽  
Hari Mohan Rai ◽  
Ravikiran Late ◽  
...  
Keyword(s):  
Raman Line ◽  
Line Shape ◽  
Analytical Study ◽  
Semiconductor Nanostructures ◽  
Phonon Confinement ◽  
Fano Effect

Line shape analysis of the Raman spectrum of diamond films grown by hot-filament and microwave-plasma chemical vapor deposition

1990 ◽  
Vol 5 (11) ◽  
pp. 2456-2468 ◽  
Author(s):  
Lawrence H. Robins ◽  
Edward N. Farabaugh ◽  
Albert Feldman
Keyword(s):  
Raman Spectra ◽  
Raman Line ◽  
Line Shape ◽  
Shape Function ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Defect Structures ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Hot Filament

Raman spectra were taken of 48 polycrystalline diamond films grown by hot-filament and microwave-plasma chemical vapor deposition (CVD), and one gem-quality diamond, and characterized by fitting the spectra to a model line shape function. The line shape function contains three components: a narrow symmetric line at ∼1333 cm−1, the Raman line of diamond; a band centered at ∼1525 cm−1 ascribed to sp2-bonded carbon; and a broad background due to photoluminescence (PL). Four spectral parameters were observed to change from one specimen to another in an interrelated manner: (1) the linewidth of the diamond Raman line, which varies from ∼3 to ∼25 cm−1; (2) the intensity in the tails of the diamond Raman line, several halfwidths away from the peak; (3) the peak intensity ratio of the sp2-bonded carbon band to the diamond Raman line, which varies from ∼0 to ∼1; and (4) the intensity ratio of the PL background to the diamond Raman peak, which varies from ∼0.03 to ∼9. We suggest that the interrelated changes in the Raman spectra are due to changes in the abundance of sp2-bonded defect structures within the diamond crystallites. Polynuclear aromatic clusters are a possible model for these defect structures. Differences in film morphology, which were observed by SEM imaging, appear to be correlated with the changes in the Raman spectra. The peak position of the diamond Raman line is shifted to higher wave number in the CVD-grown films than in the gem, by as much as 3 cm−1, but this shift is not correlated with the other changes in the Raman spectra. As a function of deposition conditions, the defect-related features of the Raman spectra generally increase with increasing methane concentration or substrate temperature, and decrease with increasing oxygen concentration. A cyclic dependence of the defect-related features on deposition time is observed for one set of films grown by hot-filament CVD.

Sign in / Sign up

Export Citation Format

Share Document