Analytic model for the valence-band structure of a strained quantum well

1994 ◽  
Vol 49 (3) ◽  
pp. 1757-1773 ◽  
Author(s):  
Bradley A. Foreman
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Analytic Model ◽  
Valence Band Structure ◽  
Strained Quantum Well

Magneto-optical study ofGa1−xInxSb/GaSb strained-quantum-well structures: Miniband formation and valence-band structure

1994 ◽  
Vol 49 (16) ◽  
pp. 11210-11221 ◽  
Author(s):  
S. L. Wong ◽  
R. J. Warburton ◽  
R. J. Nicholas ◽  
N. J. Mason ◽  
P. J. Walker
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Optical Study ◽  
Valence Band Structure ◽  
Quantum Well Structures ◽  
Strained Quantum Well

FINITE ELEMENT ANALYSIS OF VALENCE BAND STRUCTURE OF SQUARE QUANTUM WELL UNDER THE ELECTRIC FIELD

2009 ◽  
Vol 16 (05) ◽  
pp. 689-696
Author(s):  
M. GUNES ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
K. AKGUNGOR ◽  
I. SÖKMEN
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Band Structure ◽  
Electric Field ◽  
Quantum Well ◽  
Valence Band ◽  
Spin Orbit ◽  
Element Analysis ◽  
Valence Band Structure ◽  
Theory Formula

Valence band structure with spin–orbit (SO) coupling of GaAs/Ga 1-x Al x As square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ([Formula: see text] method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys.64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger–Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure.

The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser

1997 ◽  
Vol 484 ◽  
Author(s):  
K. S. Chan ◽  
Michael C. Y. Chan
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Tensile Strain ◽  
Optical Gain ◽  
Valence Band Structure ◽  
Quantum Well Laser ◽  
Tensile Strains

AbstractIn this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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