Strained quantum well valence‐band structure and optimal parameters for AlGaAs‐InGaAs‐AlGaAsp‐channel field‐effect transistors

1991 ◽  
Vol 70 (3) ◽  
pp. 1531-1538 ◽  
Author(s):  
B. Laikhtman ◽  
R. A. Kiehl ◽  
D. J. Frank
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optimal Parameters ◽  
Valence Band Structure ◽  
Strained Quantum Well

Magneto-optical study ofGa1−xInxSb/GaSb strained-quantum-well structures: Miniband formation and valence-band structure

1994 ◽  
Vol 49 (16) ◽  
pp. 11210-11221 ◽  
Author(s):  
S. L. Wong ◽  
R. J. Warburton ◽  
R. J. Nicholas ◽  
N. J. Mason ◽  
P. J. Walker
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Optical Study ◽  
Valence Band Structure ◽  
Quantum Well Structures ◽  
Strained Quantum Well

FINITE ELEMENT ANALYSIS OF VALENCE BAND STRUCTURE OF SQUARE QUANTUM WELL UNDER THE ELECTRIC FIELD

2009 ◽  
Vol 16 (05) ◽  
pp. 689-696
Author(s):  
M. GUNES ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
K. AKGUNGOR ◽  
I. SÖKMEN
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Band Structure ◽  
Electric Field ◽  
Quantum Well ◽  
Valence Band ◽  
Spin Orbit ◽  
Element Analysis ◽  
Valence Band Structure ◽  
Theory Formula

Valence band structure with spin–orbit (SO) coupling of GaAs/Ga 1-x Al x As square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ([Formula: see text] method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys.64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger–Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure.

Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors

1996 ◽  
Vol 35 (Part 1, No. 4A) ◽  
pp. 2085-2089 ◽  
Author(s):  
Rong Tay Hsu ◽  
Wei Chou Hsu ◽  
Jiann Shiun Wang ◽  
Ming Jer Kao ◽  
Yu Huei Wu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Strained Quantum Well

The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser

1997 ◽  
Vol 484 ◽  
Author(s):  
K. S. Chan ◽  
Michael C. Y. Chan
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Valence Band ◽  
Tensile Strain ◽  
Optical Gain ◽  
Valence Band Structure ◽  
Quantum Well Laser ◽  
Tensile Strains

AbstractIn this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.

Sign in / Sign up

Export Citation Format

Share Document