Conduction-band spin splitting of type-IGaxIn1−xAs/InP quantum wells

1994 ◽  
Vol 49 (20) ◽  
pp. 14786-14789 ◽  
Author(s):  
B. Kowalski ◽  
P. Omling ◽  
B. K. Meyer ◽  
D. M. Hofmann ◽  
C. Wetzel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Spin Splitting

The conduction band spin splitting in type-I strained and unstrained (GaIn)As/InP quantum wells

1994 ◽  
Vol 37 (4-6) ◽  
pp. 669-672 ◽  
Author(s):  
P. Omling ◽  
B. Kowalski ◽  
B.K. Meyer ◽  
D.M. Hofmann ◽  
C. Wetzel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Spin Splitting ◽  
Type I

Conduction Band Spin Splitting in InxGa1-xAs/GaAs Quantum Wells

1998 ◽  
Vol 37 (Part 1, No. 8) ◽  
pp. 4272-4276 ◽  
Author(s):  
B. Kowalski ◽  
V. Zwiller ◽  
C. Wiggren ◽  
P. R. Varekamp ◽  
M. S. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Spin Splitting

Raman scattering on modulation-doped quantum wells: Intrinsic spin splitting of the GaAs conduction band

1994 ◽  
Vol 305 (1-3) ◽  
pp. 247-250 ◽  
Author(s):  
B. Jusserand ◽  
D. Richards ◽  
H. Peric ◽  
B. Etienne
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Conduction Band ◽  
Spin Splitting

Inducing normally forbidden transitions within the conduction band of GaAs quantum wells

1990 ◽  
Vol 57 (4) ◽  
pp. 366-368 ◽  
Author(s):  
Janet L. Pan ◽  
Lawrence C. West ◽  
Susan J. Walker ◽  
Roger J. Malik ◽  
John F. Walker
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Forbidden Transitions

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Conduction‐band states of thin InAs/AlSb quantum wells

1994 ◽  
Vol 64 (12) ◽  
pp. 1529-1531 ◽  
Author(s):  
Timothy B. Boykin
Keyword(s):  
Quantum Wells ◽  
Conduction Band
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