Zero-magnetic-field spin splitting in the GaAs conduction band from Raman scattering on modulation-doped quantum wells

1992 ◽  
Vol 69 (5) ◽  
pp. 848-851 ◽  
Author(s):  
B. Jusserand ◽  
D. Richards ◽  
H. Peric ◽  
B. Etienne
Keyword(s):  
Magnetic Field ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Conduction Band ◽  
Spin Splitting ◽  
Zero Magnetic Field

Spin splitting of excitons in GaAs quantum wells at zero magnetic field

1996 ◽  
Vol 40 (1-8) ◽  
pp. 755-758 ◽  
Author(s):  
L Muñoz ◽  
E Pérez ◽  
L Viña ◽  
J Ferńandez-Rossier ◽  
C Tejedor ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Spin Splitting ◽  
Zero Magnetic Field

Raman scattering on modulation-doped quantum wells: Intrinsic spin splitting of the GaAs conduction band

1994 ◽  
Vol 305 (1-3) ◽  
pp. 247-250 ◽  
Author(s):  
B. Jusserand ◽  
D. Richards ◽  
H. Peric ◽  
B. Etienne
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Conduction Band ◽  
Spin Splitting

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Conduction-band spin splitting of type-IGaxIn1−xAs/InP quantum wells

1994 ◽  
Vol 49 (20) ◽  
pp. 14786-14789 ◽  
Author(s):  
B. Kowalski ◽  
P. Omling ◽  
B. K. Meyer ◽  
D. M. Hofmann ◽  
C. Wetzel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Spin Splitting

ELECTRON AND HOLE EFFECTIVE g FACTORS IN InAs/GaSb QUANTUM WELLS

2003 ◽  
Vol 02 (06) ◽  
pp. 437-444 ◽  
Author(s):  
A. ZAKHAROVA ◽  
S. T. YEN ◽  
K. A. CHAO
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Quantum Wells ◽  
Landau Level ◽  
Heavy Hole ◽  
Strong Dependence ◽  
Zero Magnetic Field ◽  
Electron Level ◽  
Hole Level ◽  
G Factors

We investigate the Landau level structures and the electron and hole effective g factors in InAs / GaSb quantum wells under electric and quantizing magnetic fields perpendicular to interfaces. In these structures, the lowest electron level in InAs can be below the highest heavy-hole level in GaSb at zero magnetic field B. Thus the electron and hole levels anticross with the increasing magnetic field and the strong dependence of the Landau level structures as well as g factors on B is obtained. We have found that the voltage across the structure and the lattice-mismatched strain also produce the essential changes in the Landau level structures as well as the electron and hole g factors.

Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Electron Energy ◽  
Self Consistent ◽  
Plane Direction ◽  
The Magnetic Field

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.

FURTHER EVIDENCE FOR A COLLAPSE OF THE EXCHANGE-ENHANCED SPIN SPLITTING IN TWO DIMENSIONAL SYSTEMS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3597-3602 ◽  
Author(s):  
B. A. PIOT ◽  
D. K. MAUDE ◽  
Z. R. WASILEWSKI ◽  
K. J. FRIEDLAND ◽  
R. HEY ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Good Description ◽  
Quantum Hall ◽  
Exchange Interactions ◽  
Spin Splitting ◽  
Spin Gap ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

The collapse of spin splitting in the integer quantum Hall effect is investigated for a series of Al x Ga 1-x As / GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature, and a simple model is developed to simulate spin splitting. As expected a single-electron picture cannot reproduce the observed spin splitting, whereas a phenomenological enhanced-spin gap taking into account exchange interactions between electrons provides a good description. The phenomenological spin gap, which is linear in B at high magnetic field, collapses when the spin splitting collapses. This is consistent with previously proposed disorder-driven destruction of exchange interactions with decreasing magnetic field.

Spin splitting of one-dimensional subbands in high quality quantum wires at zero magnetic field

2000 ◽  
Vol 62 (23) ◽  
pp. 15842-15850 ◽  
Author(s):  
K. S. Pyshkin ◽  
C. J. B. Ford ◽  
R. H. Harrell ◽  
M. Pepper ◽  
E. H. Linfield ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wires ◽  
Spin Splitting ◽  
Zero Magnetic Field ◽  
High Quality ◽  
One Dimensional
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