Inducing normally forbidden transitions within the conduction band of GaAs quantum wells

1990 ◽  
Vol 57 (4) ◽  
pp. 366-368 ◽  
Author(s):  
Janet L. Pan ◽  
Lawrence C. West ◽  
Susan J. Walker ◽  
Roger J. Malik ◽  
John F. Walker
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Forbidden Transitions

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Conduction‐band states of thin InAs/AlSb quantum wells

1994 ◽  
Vol 64 (12) ◽  
pp. 1529-1531 ◽  
Author(s):  
Timothy B. Boykin
Keyword(s):  
Quantum Wells ◽  
Conduction Band

Bandstructure Near Misfit Dislocations in Si Quantum Wells

1998 ◽  
Vol 4 (S2) ◽  
pp. 794-795
Author(s):  
P.E. Batson
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Electron Mobility ◽  
Axial Strain ◽  
Strain Relaxation ◽  
Local Potential ◽  
Misfit Dislocations ◽  
High Electron ◽  
Strained Si ◽  
Growth Interface

High electron mobility structures have been built for several years now using strained silicon layers grown on SixGe(1-x) with x in the 25-40% range. In these structures, a thin layer of silicon is grown between layers of unstrained GeSi alloy. Matching of the two lattices in the plane of growth produces a bi-axial strain in the silicon, splitting the conduction band and providing light electron levels for enhanced mobility. If the silicon channel becomes too thick, strain relaxation can occur by injection of misfit dislocations at the growth interface between the silicon and GeSi alloy. The strain field of these dislocations then gives rise to a local potential variation that limits electron mobility in the strained Si channel. This study seeks to verify this mechanism by measuring the absolute conduction band shifts which track the local potential near the misfit dislocations.

MQW p-i-n heterostructure electro-optical characteristics in the region of allowed and "forbidden" transitions in quantum wells

1990 ◽  
Author(s):  
Polievet I. Perov ◽  
A. V. Chomich ◽  
L. A. Avdeeva ◽  
B. K. Medvedev ◽  
V. B. Mokerov
Keyword(s):  
Quantum Wells ◽  
Optical Characteristics ◽  
Forbidden Transitions

scholarly journals Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms

2019 ◽  
Vol 110 ◽  
pp. 95-99 ◽  
Author(s):  
G.M. Minkov ◽  
V. Ya. Aleshkin ◽  
O.E. Rut ◽  
A.A. Sherstobitov ◽  
A.V. Germanenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting

Conduction-band and valence-band structures in strainedIn1−xGaxAs/InP quantum wells on (001) InP substrates

1993 ◽  
Vol 48 (11) ◽  
pp. 8102-8118 ◽  
Author(s):  
Mitsuru Sugawara ◽  
Niroh Okazaki ◽  
Takuya Fujii ◽  
Susumu Yamazaki
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Structures ◽  
Inp Substrates

Contactless electroreflectance of GaNyAs1−y/GaAs multi quantum wells: The conduction band offset and electron effective mass issues

2006 ◽  
Vol 138 (7) ◽  
pp. 365-370 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Band Offset ◽  
Electron Effective Mass ◽  
Conduction Band Offset

Conduction-band spin splitting of type-IGaxIn1−xAs/InP quantum wells

1994 ◽  
Vol 49 (20) ◽  
pp. 14786-14789 ◽  
Author(s):  
B. Kowalski ◽  
P. Omling ◽  
B. K. Meyer ◽  
D. M. Hofmann ◽  
C. Wetzel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Spin Splitting
Sign in / Sign up

Export Citation Format

Share Document