Continuous-wave and pulsed electron-nuclear double-resonance study of paramagnetic defects in amorphous hydrogenated silicon-carbon alloy

1993 ◽  
Vol 48 (3) ◽  
pp. 1997-2000 ◽  
Author(s):  
Hsueh Yi Lu ◽  
Mark A. Petrich ◽  
Chaoliang Fan ◽  
Brian M. Hoffman
Keyword(s):  
Continuous Wave ◽  
Double Resonance ◽  
Electron Nuclear Double Resonance ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon

Sputtered Fitas of Amorphous Hydrogenated Silicon Carbide

1987 ◽  
Vol 97 ◽  
Author(s):  
Richard B. Rizk ◽  
Alain E. Kaloyeros ◽  
Wendell S. Williams ◽  
Nancy Finnegan ◽  
Carol Kozlowski
Keyword(s):  
Structural Changes ◽  
Rapid Development ◽  
Chemical Bonds ◽  
Complete Understanding ◽  
Silicon Matrix ◽  
Hydrogenated Silicon ◽  
Physical Mechanisms ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Scientific Attention

The field of amorphous hydrogenated silicon-carbon alloys and thin films has witnessed, since the pioneering work of Anderson and Spear [1], rapid development and has attracted scientific attention and technological interest [2,3]. However, relatively little information is known [4] about the physical mechanisms that govern the inclusion of C and H in the silicon matrix, the nature of the chemical bonds involved, and the structural changes that result in the amorphous phase. Clearly, further fundamental studies are needed to achieve complete understanding of such amorphous systems with variable disorder.

The effect of hydrogen dilution on the interatomic bonding of amorphous hydrogenated silicon: carbon

1994 ◽  
Vol 169 (1-2) ◽  
pp. 54-63 ◽  
Author(s):  
P.J.R. Honeybone ◽  
J.K. Walters ◽  
D.W. Huxley ◽  
R.J. Newport ◽  
W.S. Howells ◽  
...  
Keyword(s):  
Hydrogenated Silicon ◽  
Hydrogen Dilution ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Interatomic Bonding

Efficient Visible Room Temperature Photoluminescence in Wide Gap Hydrogenated Amorphous Silicon-Carbon Alloys

1994 ◽  
Vol 336 ◽  
Author(s):  
Leandro R. Tessler ◽  
Ionel Solomon
Keyword(s):  
Room Temperature ◽  
Urbach Energy ◽  
Photoluminescence Intensity ◽  
Tetrahedral Coordination ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous ◽  
Carbon Concentrations ◽  
Phonon Model

ABSTRACTWe report a photoluminescence study on amorphous hydrogenated silicon carbon (a-Si1-xCx:H) alloys with carbon concentration in the range O < x < 0.5, prepared by PECVD in the “low-power” regime, that preserves the tetrahedral coordination of the carbon atoms. These samples have optical gaps higher than conventional “high power” alloys with the same carbon content. For carbon concentrations below x = 0.2 the photoluminescence behaves essentially as in pure a-Si:H with increased gap, Urbach energy and DOS. For higher carbon concentrations there is a change in the recombination process, that we attribute to a change in the dominating diffusion process of the photogenerated carriers. The integrated photoluminescence intensity for carbon-rich samples is very weakly dependent on the temperature, and at room temperature it approaches that of pure a-Si:H at 77K. For all samples, the photoluminescence bandwidth can be well described by a zero-phonon model.

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