Finite-frequency shot noise in a correlated tunneling current

1993 ◽  
Vol 48 (23) ◽  
pp. 17209-17216 ◽  
Author(s):  
Ulrik Hanke ◽  
Yu. M. Galperin ◽  
K. A. Chao ◽  
Nanzhi Zou
Keyword(s):  
Shot Noise ◽  
Tunneling Current ◽  
Finite Frequency

scholarly journals Physics-Informed Neural Network for High Frequency Noise Performance in Quasi-Ballistic MOSFETs

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2219
Author(s):  
Jonghwan Lee
Keyword(s):  
Neural Network ◽  
Shot Noise ◽  
High Frequency ◽  
Equivalent Circuit Model ◽  
Tunneling Current ◽  
Fano Factor ◽  
Channel Noise ◽  
Frequency Noise ◽  
Noise Performance ◽  
Noise Sources

A physics-informed neural network (PINN) model is presented to predict the nonlinear characteristics of high frequency (HF) noise performance in quasi-ballistic MOSFETs. The PINN model is formulated by combining the radial basis function-artificial neural networks (RBF-ANNs) with an improved noise equivalent circuit model, including all the noise sources. The RBF-ANNs are utilized to model the thermal channel noise, induced gate noise, correlation noise, as well as the shot noise, due to the gate and source-drain tunneling current through the potential barriers. By training a spatial distribution of the thermal channel noise and a Fano factor of the shot noise, underlying physical theories are naturally embedded into the PINN model as prior information. The PINN model shows good capability of predicting the noise performance at high frequencies.

scholarly journals Detection of finite-frequency photoassisted shot noise with a resonant circuit

2010 ◽  
Vol 81 (20) ◽  
Author(s):  
D. Chevallier ◽  
T. Jonckheere ◽  
E. Paladino ◽  
G. Falci ◽  
T. Martin
Keyword(s):  
Shot Noise ◽  
Resonant Circuit ◽  
Finite Frequency

Finite-frequency shot noise in a single-electron transistor

1994 ◽  
Vol 50 (3) ◽  
pp. 1595-1603 ◽  
Author(s):  
Ulrik Hanke ◽  
Yu. M. Galperin ◽  
K. A. Chao
Keyword(s):  
Shot Noise ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Finite Frequency

scholarly journals Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2759
Author(s):  
Jonghwan Lee
Keyword(s):  
Analytical Model ◽  
Shot Noise ◽  
Tunneling Current ◽  
Fano Factor ◽  
Unified Model ◽  
Analytical Formulation ◽  
Landauer Formula ◽  
Gate Tunneling ◽  
Tunneling Currents ◽  
Ultrathin Oxide

A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents.

scholarly journals Light emission and finite-frequency shot noise in molecular junctions: From tunneling to contact

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Jing-Tao Lü ◽  
Rasmus Bjerregaard Christensen ◽  
Mads Brandbyge
Keyword(s):  
Shot Noise ◽  
Light Emission ◽  
Molecular Junctions ◽  
Finite Frequency

Experiments with a scanning tunneling microscope (STM) mounted in a scanning electron microscope (SEM)

1986 ◽  
Vol 44 ◽  
pp. 636-639
Author(s):  
Oliver C. Wells ◽  
Mark E. Welland
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Mechanical Stability ◽  
Tunneling Current ◽  
Feedback System ◽  
Scanning Tunneling ◽  
Surface Profiling ◽  
Close Proximity ◽  
Metal Tip ◽  
Scanning Electron

Scanning tunneling microscopes (STM) exist in two versions. In both of these, a pointed metal tip is scanned in close proximity to the specimen surface by means of three piezos. The distance of the tip from the sample is controlled by a feedback system to give a constant tunneling current between the tip and the sample. In the low-end STM, the system has a mechanical stability and a noise level to give a vertical resolution of between 0.1 nm and 1.0 nm. The atomic resolution STM can show individual atoms on the surface of the specimen.A low-end STM has been put into the specimen chamber of a scanning electron microscope (SEM). The first objective was to investigate technological problems such as surface profiling. The second objective was for exploratory studies. This second objective has already been achieved by showing that the STM can be used to study trapping sites in SiO2.

Sign in / Sign up

Export Citation Format

Share Document