Finite-frequency shot noise in a single-electron transistor

1994 ◽  
Vol 50 (3) ◽  
pp. 1595-1603 ◽  
Author(s):  
Ulrik Hanke ◽  
Yu. M. Galperin ◽  
K. A. Chao
Keyword(s):  
Shot Noise ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Finite Frequency

Radio-frequency single-electron transistor: Toward the shot-noise limit

2001 ◽  
Vol 79 (24) ◽  
pp. 4031-4033 ◽  
Author(s):  
A. Aassime ◽  
D. Gunnarsson ◽  
K. Bladh ◽  
P. Delsing ◽  
R. Schoelkopf
Keyword(s):  
Radio Frequency ◽  
Shot Noise ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Noise Limit ◽  
Shot Noise Limit

scholarly journals Strong suppression of shot noise in a feedback-controlled single-electron transistor

2016 ◽  
Vol 12 (3) ◽  
pp. 218-222 ◽  
Author(s):  
Timo Wagner ◽  
Philipp Strasberg ◽  
Johannes C. Bayer ◽  
Eddy P. Rugeramigabo ◽  
Tobias Brandes ◽  
...  
Keyword(s):  
Shot Noise ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Strong Suppression

scholarly journals Measurement of finite-frequency current statistics in a single-electron transistor

2012 ◽  
Vol 3 (1) ◽  
Author(s):  
Niels Ubbelohde ◽  
Christian Fricke ◽  
Christian Flindt ◽  
Frank Hohls ◽  
Rolf J. Haug
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Finite Frequency ◽  
Frequency Current

Collection and counting efficiency

2017 ◽  
Author(s):  
A. G. Wright
Keyword(s):  
Quantum Efficiency ◽  
Standard Method ◽  
Shot Noise ◽  
Count Rate ◽  
Detection Efficiency ◽  
Collection Efficiency ◽  
Counting Efficiency ◽  
Single Electron ◽  
Anode Current ◽  
Secondary Electrons

Standards laboratories can provide a photocathode calibration for quantum efficiency, as a function of wavelength, but their measurements are performed with the photomultiplier operating as a photodiode. Each photoelectron released makes a contribution to the photocathode current but, if it is lost or fails to create secondary electrons at d1, it makes no contribution to anode current. This is the basis of collection efficiency, F. The anode detection efficiency, ε‎, allied to F, refers to the counting efficiency of output pulses. The standard method for determining F involves photocurrent, anode current, count rate, and the use of highly attenuating filters; F may also be measured using methods based on single-electron responses (SERs), shot noise, or the SER at the first dynode.

Evidence for activated conduction in a single electron transistor

2001 ◽  
Vol 89 (1) ◽  
pp. 410-419 ◽  
Author(s):  
Nicole Y. Morgan ◽  
David Abusch-Magder ◽  
Marc A. Kastner ◽  
Yasuo Takahashi ◽  
Hiroyuki Tamura ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistor

The current analysis of a single electron transistor based on double graphene nanoscroll island

2021 ◽  
Vol 327 ◽  
pp. 114234
Author(s):  
Vahideh Khademhosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Current Analysis

Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor

2021 ◽  
Author(s):  
Kumar Gaurav ◽  
Boddepalli SanthiBhushan ◽  
Ravi Mehla ◽  
Anurag Srivastava
Keyword(s):  
Gas Sensor ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Toxic Gas

Charge transport and photon-assisted tunneling in the NSN single-electron transistor

1994 ◽  
Vol 203 (3-4) ◽  
pp. 327-339 ◽  
Author(s):  
J.M. Hergenrother ◽  
M.T. Tuominen ◽  
J.G. Lu ◽  
D.C. Ralph ◽  
M. Tinkham
Keyword(s):  
Charge Transport ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Assisted Tunneling
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