scholarly journals SPECTRAL DENSITY FOR THE TUNNELING CURRENT ZERO-FREQUENCY SHOT-NOISE IN A ONE-DIMENTIONAL MESOSCOPIC SYSTEM

1999 ◽  
Vol 48 (2) ◽  
pp. 302
Author(s):  
ZHU ZHU-XIANG ◽  
ZHENG DA-FANG ◽  
LIU YOU-YAN
Keyword(s):  
Spectral Density ◽  
Shot Noise ◽  
Tunneling Current ◽  
Mesoscopic System ◽  
Current Zero ◽  
Zero Frequency

Calculation of the isothermal susceptibility by the Kubo formula

1976 ◽  
Vol 54 (14) ◽  
pp. 1461-1464 ◽  
Author(s):  
T. Morita ◽  
T. Horiguchi
Keyword(s):  
Ising Model ◽  
Spectral Density ◽  
Density Function ◽  
Spectral Density Function ◽  
Kubo Formula ◽  
Frequency Limit ◽  
Frequency Dependent ◽  
Isothermal Susceptibility ◽  
Zero Frequency

The relation between the zero frequency limit of the frequency-dependent susceptibility and the isothermal susceptibility is made clearer by expressing them in terms of the spectral density function. The general formulas are illustrated for the perpendicular susceptibilities of the Ising model.

Finite-frequency shot noise in a correlated tunneling current

1993 ◽  
Vol 48 (23) ◽  
pp. 17209-17216 ◽  
Author(s):  
Ulrik Hanke ◽  
Yu. M. Galperin ◽  
K. A. Chao ◽  
Nanzhi Zou
Keyword(s):  
Shot Noise ◽  
Tunneling Current ◽  
Finite Frequency

scholarly journals Physics-Informed Neural Network for High Frequency Noise Performance in Quasi-Ballistic MOSFETs

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2219
Author(s):  
Jonghwan Lee
Keyword(s):  
Neural Network ◽  
Shot Noise ◽  
High Frequency ◽  
Equivalent Circuit Model ◽  
Tunneling Current ◽  
Fano Factor ◽  
Channel Noise ◽  
Frequency Noise ◽  
Noise Performance ◽  
Noise Sources

A physics-informed neural network (PINN) model is presented to predict the nonlinear characteristics of high frequency (HF) noise performance in quasi-ballistic MOSFETs. The PINN model is formulated by combining the radial basis function-artificial neural networks (RBF-ANNs) with an improved noise equivalent circuit model, including all the noise sources. The RBF-ANNs are utilized to model the thermal channel noise, induced gate noise, correlation noise, as well as the shot noise, due to the gate and source-drain tunneling current through the potential barriers. By training a spatial distribution of the thermal channel noise and a Fano factor of the shot noise, underlying physical theories are naturally embedded into the PINN model as prior information. The PINN model shows good capability of predicting the noise performance at high frequencies.

scholarly journals Tunneling current and noise of entangled electrons in correlated double quantum dot

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. S. Maslova ◽  
P. I. Arseyev ◽  
V. N. Mantsevich
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Tunneling Current ◽  
Spin Symmetry ◽  
Single Type ◽  
Entangled States ◽  
Spin Projection ◽  
Frequency Noise ◽  
Total System ◽  
Zero Frequency

AbstractWe developed general approach for the analysis of tunneling current and its zero frequency noise for a wide class of systems where electron transport occurs through the intermediate structure with localized electrons. Proposed approach opens the possibility to study electron transport through multi-electron correlated states and allows to reveal the influence of spatial and spin symmetry of the total system on the electron transport. This approach is based on Keldysh diagram technique in pseudo-particle representation taking into account the operator constraint on the number of pseudo-particles, which gives the possibility to exclude non-physical states. It was shown that spatial and spin symmetry of the total system can block some channels for electron transport through the correlated quantum dots. Moreover, it was demonstrated that the stationary tunneling current and zero frequency noise in correlated coupled quantum dots depend on initial state of the system. In the frame of the proposed approach it was also shown that for the parallel coupling of two correlated quantum dots to the reservoirs tunneling current and its zero frequency noise are suppressed if tunneling occurs through the entangled triplet state with zero total spin projection on the z axis or enhanced for the tunneling through the singlet state in comparison with electron transport through the uncorrelated localized single-electron state. Obtained results demonstrate that two-electron entangled states in correlated quantum dots give the possibility to tune the zero frequency noise amplitude by blocking some channels for electron transport that is very promising in the sense of two-electron entangled states application in quantum communication and logic devices. The obtained nonmonotonic behavior of Fano factor as a function of applied bias is the direct manifestation of the possibility to control the noise to signal ration in correlated quantum dots. We also provide detailed calculations of current and noise for both single type of carriers and two different types of carriers in the presence and in the absence of Coulomb interaction in Supplementary materials.

scholarly journals Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2759
Author(s):  
Jonghwan Lee
Keyword(s):  
Analytical Model ◽  
Shot Noise ◽  
Tunneling Current ◽  
Fano Factor ◽  
Unified Model ◽  
Analytical Formulation ◽  
Landauer Formula ◽  
Gate Tunneling ◽  
Tunneling Currents ◽  
Ultrathin Oxide

A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents.

scholarly journals Monte Carlo simulation of shot noise in the coherent and mesoscopic system

2008 ◽  
Vol 57 (4) ◽  
pp. 2438
Author(s):  
Chen Hua ◽  
Du Lei ◽  
Zhuang Yi-Qi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Shot Noise ◽  
Mesoscopic System

scholarly journals EXPLORATION OF THE MEMORY EFFECT ON THE PHOTON-ASSISTED TUNNELING VIA A SINGLE QUANTUM DOT: A GENERALIZED FLOQUET THEORETICAL APPROACH

2011 ◽  
Vol 25 (17) ◽  
pp. 2251-2270
Author(s):  
HSING-TA CHEN ◽  
TAK-SAN HO ◽  
SHIH-I CHU
Keyword(s):  
Quantum Dot ◽  
Spectral Density ◽  
Memory Effect ◽  
Tunneling Current ◽  
Single Quantum ◽  
Periodically Driven ◽  
Single Quantum Dot ◽  
Voltage Limit ◽  
Van Vleck ◽  
Degenerate Perturbation Theory

The generalized Floquet approach is developed to study memory effect on electron transport phenomena through a periodically driven single quantum dot in an electrode–multi-level dot–electrode nanoscale quantum device. The memory effect is treated using a multi-function Lorentzian spectral density (LSD) model that mimics the spectral density of each electrode in terms of multiple Lorentzian functions. For the symmetric single-function LSD model involving a single-level dot, the underlying single-particle propagator is shown to be related to a 2×2 effective time-dependent Hamiltonian that includes both the periodic external field and the electrode memory effect. By invoking the generalized Van Vleck (GVV) nearly degenerate perturbation theory, an analytical Tien-Gordon-like expression is derived for arbitrary order multi-photon resonance d.c. tunneling current. Numerically converged simulations and the GVV analytical results are in good agreement, revealing the origin of multi-photon coherent destruction of tunneling and accounting for the suppression of the staircase jumps of d.c. current due to the memory effect. Specially, a novel blockade phenomenon is observed, showing distinctive oscillations in the field-induced current in the large bias voltage limit.

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