Analytical approach to the inversion-asymmetry splitting of the valence band in zinc-blende-type semiconductors

1993 ◽  
Vol 48 (16) ◽  
pp. 12285-12288
Author(s):  
Samy S. Montasser
Keyword(s):  
Valence Band ◽  
Analytical Approach ◽  
Zinc Blende ◽  
Inversion Asymmetry

Effect of bulk inversion asymmetry on optical transitions of zinc blende semiconductor quantum wells

2007 ◽  
Vol 101 (4) ◽  
pp. 046105 ◽  
Author(s):  
Chun-Nan Chen ◽  
Sheng-Hsiung Chang ◽  
Meng-En Lee ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Transitions ◽  
Semiconductor Quantum Wells ◽  
Zinc Blende ◽  
Bulk Inversion Asymmetry ◽  
Inversion Asymmetry ◽  
Bulk Inversion

Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects

1998 ◽  
Vol 80 (26) ◽  
pp. 5770-5773 ◽  
Author(s):  
O. Krebs ◽  
D. Rondi ◽  
J. L. Gentner ◽  
L. Goldstein ◽  
P. Voisin
Keyword(s):  
Potential Versus ◽  
External Potential ◽  
Zinc Blende ◽  
Inversion Asymmetry

Inversion asymmetry and magneto-optics in zinc-blende semiconductors

1989 ◽  
Vol 12 (2) ◽  
pp. 1-67 ◽  
Author(s):  
N. Kim ◽  
G. C. La Rocca ◽  
S. Rodriguez ◽  
F. Bassani
Keyword(s):  
Zinc Blende ◽  
Inversion Asymmetry

scholarly journals Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence

2012 ◽  
Vol 85 (4) ◽  
Author(s):  
D. Spirkoska ◽  
Al. L. Efros ◽  
W. R. L. Lambrecht ◽  
T. Cheiwchanchamnangij ◽  
A. Fontcuberta i Morral ◽  
...  
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Valence Band Structure ◽  
Zinc Blende ◽  
Gaas Nanowires

scholarly journals The Quantum Calculation for Valence Band Structure of Strained Zinc-blende GaN Using Six-Band Based k·p Method

2021 ◽  
Vol 2065 (1) ◽  
pp. 012002
Author(s):  
Yaqun Liu ◽  
Everett X. Wang ◽  
Gary Zhang ◽  
Xiyue Li
Keyword(s):  
Valence Band ◽  
Quantum Confinement Effect ◽  
Hole Mobility ◽  
Uniaxial Stress ◽  
Carrier Distribution ◽  
Group Iii ◽  
Stress Effects ◽  
Zinc Blende ◽  
Group Iii Nitride ◽  
Strain Dependent

Abstract The variations of valence band energy with stress effects in zinc-blende GaN are proposed in this paper. The calculations are based on a six-band strain dependent k·p Hamiltonian, and can be self-consistently solved by Schrödinger-Poisson equation. Accurate physical pictures are given for the quantized valence subband structure under biaxial and uniaxial stress in (001) surface along the [110] direction accounting the quantum confinement effect. The warping of the energy profile results in carrier distribution change. This research will be beneficial for improving the hole mobility and the selective of optimum stress for group-III nitride semiconductor based devices.

[001] strain-induced band mixing in zinc-blende semiconductors: Intravalence versus upper-conduction–valence band effects

1994 ◽  
Vol 50 (23) ◽  
pp. 16956-16963 ◽  
Author(s):  
Denis Bertho ◽  
Jean-Marc Jancu ◽  
Christian Jouanin
Keyword(s):  
Valence Band ◽  
Zinc Blende ◽  
Band Mixing
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