Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects

1998 ◽  
Vol 80 (26) ◽  
pp. 5770-5773 ◽  
Author(s):  
O. Krebs ◽  
D. Rondi ◽  
J. L. Gentner ◽  
L. Goldstein ◽  
P. Voisin
Keyword(s):  
Potential Versus ◽  
External Potential ◽  
Zinc Blende ◽  
Inversion Asymmetry

Effect of bulk inversion asymmetry on optical transitions of zinc blende semiconductor quantum wells

2007 ◽  
Vol 101 (4) ◽  
pp. 046105 ◽  
Author(s):  
Chun-Nan Chen ◽  
Sheng-Hsiung Chang ◽  
Meng-En Lee ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Transitions ◽  
Semiconductor Quantum Wells ◽  
Zinc Blende ◽  
Bulk Inversion Asymmetry ◽  
Inversion Asymmetry ◽  
Bulk Inversion

Inversion asymmetry and magneto-optics in zinc-blende semiconductors

1989 ◽  
Vol 12 (2) ◽  
pp. 1-67 ◽  
Author(s):  
N. Kim ◽  
G. C. La Rocca ◽  
S. Rodriguez ◽  
F. Bassani
Keyword(s):  
Zinc Blende ◽  
Inversion Asymmetry

Inversion asymmetry and hole magnetooptics in zinc-blende semiconductors

1988 ◽  
Vol 37 (12) ◽  
pp. 6857-6867 ◽  
Author(s):  
F. Bassani ◽  
G. C. La Rocca ◽  
S. Rodriguez
Keyword(s):  
Zinc Blende ◽  
Inversion Asymmetry

Inversion asymmetry and magneto-optical selection rules inn-type zinc-blende semiconductors

1985 ◽  
Vol 32 (2) ◽  
pp. 903-913 ◽  
Author(s):  
Sudha Gopalan ◽  
J. K. Furdyna ◽  
S. Rodriguez
Keyword(s):  
Selection Rules ◽  
Zinc Blende ◽  
Inversion Asymmetry

Manifestation of defects in phonon spectra of binary zinc-blende compounds

2004 ◽  
Vol 27 (1-3) ◽  
pp. 321-324 ◽  
Author(s):  
J. Polit ◽  
E. M. Sheregii ◽  
J. Cebulski ◽  
M. Pociask ◽  
A. Kisiel ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Phonon Spectra

EXCITON INSULATOR STATES IN MATERIALS WITH ‘MEXICAN HAT’ BAND STRUCTURE DISPERSION AND IN GRAPHENE

2015 ◽  
Vol 11 (1) ◽  
pp. 2927-2949
Author(s):  
Lyubov E. Lokot
Keyword(s):  
Band Structure ◽  
Three Dimensional ◽  
Dimensional Sphere ◽  
Electron Hole ◽  
Dinger Equation ◽  
Fermi Sphere ◽  
Zinc Blende ◽  
Bulk Gan ◽  
Structure Dispersion ◽  
Excitonic States

In the paper a theoretical study the both the quantized energies of excitonic states and their wave functions in grapheneand in materials with "Mexican hat" band structure dispersion as well as in zinc-blende GaN is presented. An integral twodimensionalSchrödinger equation of the electron-hole pairing for a particles with electron-hole symmetry of reflection isexactly solved. The solutions of Schrödinger equation in momentum space in studied materials by projection the twodimensionalspace of momentum on the three-dimensional sphere are found exactly. We analytically solve an integral twodimensionalSchrödinger equation of the electron-hole pairing for particles with electron-hole symmetry of reflection. Instudied materials the electron-hole pairing leads to the exciton insulator states. Quantized spectral series and lightabsorption rates of the excitonic states which distribute in valence cone are found exactly. If the electron and hole areseparated, their energy is higher than if they are paired. The particle-hole symmetry of Dirac equation of layered materialsallows perfect pairing between electron Fermi sphere and hole Fermi sphere in the valence cone and conduction cone andhence driving the Cooper instability. The solutions of Coulomb problem of electron-hole pair does not depend from a widthof band gap of graphene. It means the absolute compliance with the cyclic geometry of diagrams at justification of theequation of motion for a microscopic dipole of graphene where >1 s r . The absorption spectrums for the zinc-blendeGaN/(Al,Ga)N quantum well as well as for the zinc-blende bulk GaN are presented. Comparison with availableexperimental data shows good agreement.

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