[001] strain-induced band mixing in zinc-blende semiconductors: Intravalence versus upper-conduction–valence band effects

1994 ◽  
Vol 50 (23) ◽  
pp. 16956-16963 ◽  
Author(s):  
Denis Bertho ◽  
Jean-Marc Jancu ◽  
Christian Jouanin
Keyword(s):  
Valence Band ◽  
Zinc Blende ◽  
Band Mixing

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing

2013 ◽  
Vol 52 (12R) ◽  
pp. 125001 ◽  
Author(s):  
Edmund Harbord ◽  
Yasutomo Ota ◽  
Yuichi Igarashi ◽  
Masayuki Shirane ◽  
Naoto Kumagai ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Valence Band ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Band Mixing ◽  
Valence Band Mixing

Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

2008 ◽  
Vol 372 (10) ◽  
pp. 1691-1694 ◽  
Author(s):  
Chun-Nan Chen ◽  
Wei-Long Su ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
Wan-Tsang Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Mixing Effect ◽  
Band Mixing ◽  
Valence Band Mixing
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