Schottky barrier and surface photovoltage induced by synchrotron radiation in GaP(110)/Ag

1993 ◽  
Vol 47 (20) ◽  
pp. 13520-13526 ◽  
Author(s):  
P. Chiaradia ◽  
J. E. Bonnet ◽  
M. Fanfoni ◽  
C. Goletti ◽  
G. Lampel
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Surface Photovoltage

Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

2003 ◽  
Vol 798 ◽  
Author(s):  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
Yasuhiro Shibata ◽  
Hironobu Watanabe ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Wavelength Range ◽  
Epitaxial Layer ◽  
Device Performance ◽  
Uv Detectors ◽  
X Ray ◽  
High Responsivity ◽  
Vacuum Uv

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage

1986 ◽  
Vol 34 (10) ◽  
pp. 6704-6712 ◽  
Author(s):  
P. John ◽  
T. Miller ◽  
T. C. Hsieh ◽  
A. P. Shapiro ◽  
A. L. Wachs ◽  
...  
Keyword(s):  
Surface Structure ◽  
Schottky Barrier ◽  
Growth Behavior ◽  
Surface Photovoltage ◽  
Interface Surface

Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

2002 ◽  
Vol 31 (12) ◽  
pp. 1353-1356 ◽  
Author(s):  
C. Virojanadara ◽  
P. -A. Glans ◽  
T. Balasubramanian ◽  
L. I. Johansson ◽  
E. B. Macak ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a‐Si:H diodes by photoemission with synchrotron radiation

1984 ◽  
Vol 44 (9) ◽  
pp. 887-889 ◽  
Author(s):  
G. Fortunato ◽  
A. D’Amico ◽  
C. Coluzza ◽  
F. Sette ◽  
C. Capasso ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier

SURFACE-PHOTOVOLTAGE EFFECT IN A GaAs–GaAsP SUPERLATTICE STUDIED WITH COMBINATION OF SYNCHROTRON RADIATION AND THE LASER

2002 ◽  
Vol 09 (02) ◽  
pp. 1297-1301 ◽  
Author(s):  
SENKU TANAKA ◽  
SAM D. MORÉ ◽  
KAZUTOSHI TAKAHASHI ◽  
MASAO KAMADA ◽  
TOMOHIRO NISHITANI ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Thermal Equilibrium ◽  
Core Level ◽  
Surface Photovoltage ◽  
Band Bending ◽  
Bulk Gaas ◽  
Temporal Profile ◽  
Significant Difference ◽  
Temporal Profiles

Core-level photoelectron spectroscopy with the combination of synchrotron radiation (SR) and a laser was used for exploring the surface-photovoltage (SPV) effect and its temporal profiles in a GaAs–GaAsP superlattice (SL). It was observed that the SPV value in the SL is suppressed as compared with a bulk GaAs. However, no significant difference was found in the temporal profile between the bulk and the SL. It is suggested that the suppression of the SPV in the SL is dominantly due to the small value of band bending under thermal equilibrium.

Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

2001 ◽  
Vol 693 ◽  
Author(s):  
Atsushi Motogaito ◽  
Keiichi Ohta ◽  
Kazumasa Hiramatsu ◽  
Youichiro Ohuchi ◽  
Kazuyuki Tadatomo ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Penetration Depth ◽  
Transparent Electrode ◽  
Electrode Structure ◽  
Uv Detectors ◽  
High Responsivity ◽  
Schottky Type

AbstractCharacterization of Schottky barrier UV detectors with a comb-shaped electrode and a transparent electrode for VUV region using synchrotron radiation was carried out. These Schottky type detectors are effective to operate in UV and VUV light (50<l >360 nm). In particular, the latter realizes high responsivity (0.01 A/W for VUV light) and no photoemission of Au and GaN. The penetration depth for VUV light was estimated to 0.01 m. So the VUV light was absorbed in near the surface of i-GaN layer or the interface of Au and i-GaN layer.

Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectors in the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation

2001 ◽  
Vol 40 (Part 2, No. 4B) ◽  
pp. L368-L370 ◽  
Author(s):  
Atsushi Motogaito ◽  
Motoo Yamaguchi ◽  
Kazumasa Hiramatsu ◽  
Masahiro Kotoh ◽  
Youichiro Ohuchi ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Vacuum Ultraviolet ◽  
Uv Detectors
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