Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage

P. John; T. Miller; T. C. Hsieh; A. P. Shapiro; A. L. Wachs; T. -C. Chiang

doi:10.1103/physrevb.34.6704

Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage

Physical Review B ◽

10.1103/physrevb.34.6704 ◽

1986 ◽

Vol 34 (10) ◽

pp. 6704-6712 ◽

Cited By ~ 49

Author(s):

P. John ◽

T. Miller ◽

T. C. Hsieh ◽

A. P. Shapiro ◽

A. L. Wachs ◽

...

Keyword(s):

Surface Structure ◽

Schottky Barrier ◽

Growth Behavior ◽

Surface Photovoltage ◽

Interface Surface

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Effect of surface structure on workfunction and Schottky-barrier height in SrRuO3/SrTiO3 (001) heterojunctions

Journal of Applied Physics ◽

10.1063/1.4872466 ◽

2014 ◽

Vol 115 (17) ◽

pp. 173705 ◽

Cited By ~ 11

Author(s):

V. Sampath Kumar ◽

Manish K. Niranjan

Keyword(s):

Surface Structure ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Effect Of Surface

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Local surface structure and interface properties of sprayed CdS films in a Schottky barrier cell

Semiconductor Science and Technology ◽

10.1088/0268-1242/11/7/022 ◽

1996 ◽

Vol 11 (7) ◽

pp. 1096-1102 ◽

Cited By ~ 3

Author(s):

Jean Ebothe

Keyword(s):

Surface Structure ◽

Schottky Barrier ◽

Interface Properties ◽

Local Surface ◽

Cds Films

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Collection length of holes in a‐Si:H by surface photovoltage using a liquid Schottky barrier

Applied Physics Letters ◽

10.1063/1.93118 ◽

1982 ◽

Vol 40 (5) ◽

pp. 403-405 ◽

Cited By ~ 53

Author(s):

Arnold R. Moore

Keyword(s):

Schottky Barrier ◽

Surface Photovoltage

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Balancing Hydrophobic and Hydrophilic Forces at the Water/Vapor Interface: Surface Structure of Soluble Alcohol Monolayers†

The Journal of Physical Chemistry C ◽

10.1021/jp066896x ◽

2007 ◽

Vol 111 (25) ◽

pp. 8739-8748 ◽

Cited By ~ 18

Author(s):

Süleyman Z. Can ◽

Deesha D. Mago ◽

Okan Esenturk ◽

Robert A. Walker

Keyword(s):

Water Vapor ◽

Surface Structure ◽

Vapor Interface ◽

Interface Surface ◽

Alcohol Monolayers

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Reply to “surface photovoltage measurements and Fermi level pinning: comments on ‘development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds’”

Thin Solid Films ◽

10.1016/0040-6090(82)90329-7 ◽

1982 ◽

Vol 89 (4) ◽

pp. L35-L40 ◽

Cited By ~ 7

Author(s):

S. Eglash ◽

W.E. Spicer ◽

I. Lindau

Keyword(s):

Fermi Level ◽

Schottky Barrier ◽

Interface States ◽

Unified Model ◽

Surface Photovoltage ◽

Fermi Level Pinning ◽

Barrier Formation

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Analysis of Au/Si Schottky barrier type AC surface photovoltage in silicon wafer surface dipped into Au aqueous solution

Electronics and Communications in Japan (Part II Electronics) ◽

10.1002/ecjb.20308 ◽

2007 ◽

Vol 90 (6) ◽

pp. 27-33 ◽

Cited By ~ 10

Author(s):

Eri Omori ◽

Hirofumi Shimizu ◽

Masanori Ikeda

Keyword(s):

Aqueous Solution ◽

Schottky Barrier ◽

Silicon Wafer ◽

Surface Photovoltage ◽

Wafer Surface ◽

Silicon Wafer Surface ◽

Barrier Type

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Surface photovoltage measurements and Fermi level pinning: comments on “development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds”

Thin Solid Films ◽

10.1016/0040-6090(82)90328-5 ◽

1982 ◽

Vol 89 (4) ◽

pp. L27-L33 ◽

Cited By ~ 10

Author(s):

L.J. Brillson

Keyword(s):

Fermi Level ◽

Schottky Barrier ◽

Interface States ◽

Unified Model ◽

Surface Photovoltage ◽

Fermi Level Pinning ◽

Barrier Formation

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Measuring the Surface Photovoltage of a Schottky Barrier under Intense Light Conditions: Zn/p-Si(100) by Laser Time-Resolved Extreme Ultraviolet Photoelectron Spectroscopy

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.7b06406 ◽

2017 ◽

Vol 121 (40) ◽

pp. 21904-21912 ◽

Cited By ~ 6

Author(s):

Brett M. Marsh ◽

Mihai E. Vaida ◽

Scott K. Cushing ◽

Bethany R. Lamoureux ◽

Stephen R. Leone

Keyword(s):

Schottky Barrier ◽

Photoelectron Spectroscopy ◽

Extreme Ultraviolet ◽

Surface Photovoltage ◽

Ultraviolet Photoelectron Spectroscopy ◽

Light Conditions ◽

Time Resolved ◽

Intense Light

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Spatially resolved space‐charge density in the hydrogenated amorphous silicon Schottky barrier from surface photovoltage measurements

Journal of Applied Physics ◽

10.1063/1.345124 ◽

1990 ◽

Vol 67 (10) ◽

pp. 6486-6489 ◽

Cited By ~ 1

Author(s):

C. I. Ukah ◽

J. M. Perz ◽

S. Zukotynski

Keyword(s):

Charge Density ◽

Space Charge ◽

Amorphous Silicon ◽

Schottky Barrier ◽

Hydrogenated Amorphous Silicon ◽

Space Charge Density ◽

Surface Photovoltage ◽

Spatially Resolved ◽

Hydrogenated Amorphous

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Schottky barrier and surface photovoltage induced by synchrotron radiation in GaP(110)/Ag

Physical Review B ◽

10.1103/physrevb.47.13520 ◽

1993 ◽

Vol 47 (20) ◽

pp. 13520-13526 ◽

Cited By ~ 13

Author(s):

P. Chiaradia ◽

J. E. Bonnet ◽

M. Fanfoni ◽

C. Goletti ◽

G. Lampel

Keyword(s):

Synchrotron Radiation ◽

Schottky Barrier ◽

Surface Photovoltage

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