Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a‐Si:H diodes by photoemission with synchrotron radiation

1984 ◽  
Vol 44 (9) ◽  
pp. 887-889 ◽  
Author(s):  
G. Fortunato ◽  
A. D’Amico ◽  
C. Coluzza ◽  
F. Sette ◽  
C. Capasso ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier

Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

2003 ◽  
Vol 798 ◽  
Author(s):  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
Yasuhiro Shibata ◽  
Hironobu Watanabe ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Wavelength Range ◽  
Epitaxial Layer ◽  
Device Performance ◽  
Uv Detectors ◽  
X Ray ◽  
High Responsivity ◽  
Vacuum Uv

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

2002 ◽  
Vol 31 (12) ◽  
pp. 1353-1356 ◽  
Author(s):  
C. Virojanadara ◽  
P. -A. Glans ◽  
T. Balasubramanian ◽  
L. I. Johansson ◽  
E. B. Macak ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

2001 ◽  
Vol 693 ◽  
Author(s):  
Atsushi Motogaito ◽  
Keiichi Ohta ◽  
Kazumasa Hiramatsu ◽  
Youichiro Ohuchi ◽  
Kazuyuki Tadatomo ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Penetration Depth ◽  
Transparent Electrode ◽  
Electrode Structure ◽  
Uv Detectors ◽  
High Responsivity ◽  
Schottky Type

AbstractCharacterization of Schottky barrier UV detectors with a comb-shaped electrode and a transparent electrode for VUV region using synchrotron radiation was carried out. These Schottky type detectors are effective to operate in UV and VUV light (50<l >360 nm). In particular, the latter realizes high responsivity (0.01 A/W for VUV light) and no photoemission of Au and GaN. The penetration depth for VUV light was estimated to 0.01 m. So the VUV light was absorbed in near the surface of i-GaN layer or the interface of Au and i-GaN layer.

Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectors in the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation

2001 ◽  
Vol 40 (Part 2, No. 4B) ◽  
pp. L368-L370 ◽  
Author(s):  
Atsushi Motogaito ◽  
Motoo Yamaguchi ◽  
Kazumasa Hiramatsu ◽  
Masahiro Kotoh ◽  
Youichiro Ohuchi ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Vacuum Ultraviolet ◽  
Uv Detectors

Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation

1978 ◽  
Vol 18 (10) ◽  
pp. 5545-5559 ◽  
Author(s):  
P. W. Chye ◽  
I. Lindau ◽  
P. Pianetta ◽  
C. M. Garner ◽  
C. Y. Su ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Photoemission Study

Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Kendelewicz ◽  
W. G. Petro ◽  
M. D. Williams ◽  
S. H. Pan ◽  
I. Lindau ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Valence Band ◽  
Chemical Reaction ◽  
Excitation Source ◽  
Nickel Phosphide ◽  
Auger Transition ◽  
Sequential Deposition ◽  
Barrier Formation ◽  
Initial Stage

ABSTRACTThe chemical reaction at the Ni/InP (110) and Ni/GaAs (110) interfaces produced by sequential deposition of thin Ni overlayers onto cleaved semiconductor surfaces has been investigated with valence band (VB) and core level photoemission and Auger spectroscopies using synchrotron radiation as the excitation source. By monitoring changes in the VB, P 2p, In 4d, Ga 3d, As 3d, and Ni 3p photoemission spectra and the lineshape of the P LVV Auger transition during the initial stage of Schottky barrier formation, we found that for both interfaces the first few Å of Ni react strongly with the surface resulting in the formation of a nickel phosphide or nickel arsenide. At the same time, segregation of metallic In or Ga is observed.

From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

1990 ◽  
Vol 41-42 ◽  
pp. 1-16 ◽  
Author(s):  
W.E. Spicer ◽  
R. Cao ◽  
K. Miyano ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Barrier Formation

Schottky barrier and surface photovoltage induced by synchrotron radiation in GaP(110)/Ag

1993 ◽  
Vol 47 (20) ◽  
pp. 13520-13526 ◽  
Author(s):  
P. Chiaradia ◽  
J. E. Bonnet ◽  
M. Fanfoni ◽  
C. Goletti ◽  
G. Lampel
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Surface Photovoltage
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