Critical investigation of the infrared-transmission-data analysis of hydrogenated amorphous silicon alloys

1992 ◽  
Vol 46 (4) ◽  
pp. 2078-2085 ◽  
Author(s):  
N. Maley
Keyword(s):  
Data Analysis ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Infrared Transmission ◽  
Silicon Alloys ◽  
Transmission Data ◽  
Hydrogenated Amorphous ◽  
Critical Investigation

Systematic Errors in the Analysis of the Infrared Transmission Data Of Hydrogenated Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Maley ◽  
I. Szafranek
Keyword(s):  
Film Thickness ◽  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Hydrogenated Amorphous Silicon ◽  
Simulated Data ◽  
Infrared Transmission ◽  
Si Substrate ◽  
Simple Method ◽  
Transmission Data ◽  
Hydrogenated Amorphous

ABSTRACTThe validity of the Brodsky, Cardona and Cuomo (BCC) [1] and the Connell and Lewis (CL) [2] methods to analyze infrared transmission data of hydrogenated amorphous silicon (a-Si:H) was examined using computer simulations. Transmission spectra for a-Si:H films 0-5¼m thick and containing up to 30 atomic% hydrogen were simulated assuming coherent reflections in the film and incoherent reflections in the c-Si substrate. Analysis of the simulated data for the 640cm−1 Si-H wagging mode shows that the BCC and CL techniques systematically overestimate the absorption coefficeint, α, and hence hydrogen content, CH, when the film thickness, d, is less than ∼l¼m. The error is nearly independent of CH and is as large as 80% in the limit d→0. On this basis, previously reported experimental evidence for the dependence of CH on d is shown to be an analysis artifact. A simple method to correct the hydrogen content determined by the BCC or CL analysis using only the film thickness is presented.

Hot plasma box glow discharge reactor for production of uniform films of hydrogenated amorphous silicon alloys

1991 ◽  
Vol 197 (1-2) ◽  
pp. 215-224 ◽  
Author(s):  
D.M. Bhusari ◽  
L. Kale ◽  
A. Kumbhar ◽  
S. Sabane ◽  
S.T. Kshirsagar
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Alloys ◽  
Hot Plasma ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon Alloys Prepared by CVD of Higher Silanes

1986 ◽  
Vol 70 ◽  
Author(s):  
Masud Akhtar ◽  
Herbert A. Weaklie
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Wide Band ◽  
Dark Conductivity ◽  
Attractive Alternative ◽  
Silicon Alloys ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon may be deposited at relatively low temperatures, where the density of defects may be expected to be low, by the chemical vapor deposition (CVD) of higher silanes. This method is an attractive alternative to plasma deposition techniques. We describe here the preparation of a-Si:H and related alloys incorporating carbon, germanium, and fluorine. a-Si:H films were deposited on heated substrates in the range 365°C-445°C by CVD of Si2H6 and Si3H8. The optical gap (Eg) ranged from 1.4 to 1.7 eV and the properties of films deposited from either Si2 H6 or Si3 H8 were quite similar. Wide band gap (Eg=2 eV) alloys of a-SiC:H doped with boron were prepared by CVD of disilane, methyl silane, and diborane. We also prepared variable band gap a-SiC:H alloys by substituting F2C= CFH for methylsilane, and these films were found to have approximately 1–2% fluorine incorporated. The dark conductivity of the boron doped a-SiC:H alloys dep~sited from either carbon source ranged from ix10-7 to 6x10-7 (ohm-cm)-1. We also prepared low band aap alloys of Si and Ge by CVD of trisilane and germane. The band gap of a film containing 20% Ge was 1.5 eV; however, the photoconductivity of the film was relatively low.

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