Picosecond carrier dynamics and studies of Auger recombination processes in indium arsenide at room temperature

1992 ◽  
Vol 46 (20) ◽  
pp. 13194-13200 ◽  
Author(s):  
K. L. Vodopyanov ◽  
H. Graener ◽  
C. C. Phillips ◽  
T. J. Tate
Keyword(s):  
Indium Arsenide ◽  
Room Temperature ◽  
Auger Recombination ◽  
Carrier Dynamics ◽  
Recombination Processes

Carrier Dynamics in Porous Silicon: from the Femtosecond to the Second

1994 ◽  
Vol 358 ◽  
Author(s):  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Time Domain ◽  
Room Temperature ◽  
Auger Recombination ◽  
Excitation Intensity ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Oxidized Porous Silicon ◽  
Red Luminescence ◽  
Absorption Measurements

ABSTRACTThe luminescence in red-emitting porous silicon exhibits a distribution of lifetimes in the μsec time domain at room temperature and in the msec time domain at cryogenic temperatures. However, the luminescence and carrier dynamics in porous silicon display transients that vary from much less than 1 psec to ∼ 1 sec, depending on the measurement conditions and sample preparation. We have investigated the carrier dynamics in porous silicon by two time-resolved techniques. The blue photoluminescence of oxidized porous silicon has been measured with 100 ps time resolution as a function of the oxidation method, emission wavelength, excitation intensity and measurement temperature. The blue luminescence has a distinct origin from the well-studied red luminescence and we attribute it to defects in the oxide. Femtosecond photoinduced absorption measurements have been performed on thin red-emitting porous silicon films. The wavelength and intensity dependence of the recovery are interpreted in terms of trapping and of Auger recombination at high excitation intensity. Our results also show conclusively that red-emitting porous silicon is not a direct gap semiconductor.

Однофотонное излучение одиночной квантовой точки CdTeSe/ZnS в ближнем инфракрасном диапазоне при комнатной температуре

2021 ◽  
Vol 47 (21) ◽  
pp. 3
Author(s):  
Siyue Jin ◽  
Xingsheng Xu
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Auger Recombination ◽  
Single Photon ◽  
Irradiation Time ◽  
Colloidal Quantum Dots ◽  
Single Quantum ◽  
Illumination Time ◽  
Single Quantum Dots ◽  
Single Quantum Dot

In this study, the photostability of a CdTeSe/ZnS colloidal single photon emitter with a wavelength of 800nm at room temperature was investigated. The second-order correlation function was much smaller than 0.1, which proved that the CdTeSe/ZnS single quantum dot at 800nm is a highly pure single-photon emitter. The effects of the irradiation time on the optical properties from single quantum dots were analyzed. As the illumination time increased, the emission of biexciton and multiexciton in the colloidal quantum dots increased, and the occurrence of Auger recombination increased.

scholarly journals Carrier Dynamics and Interactions for Bulklike Photoexcitation of Colloidal Indium Arsenide Quantum Dots

2018 ◽  
Vol 123 (1) ◽  
pp. 848-858 ◽  
Author(s):  
Austin P. Spencer ◽  
William K. Peters ◽  
Nathan R. Neale ◽  
David M. Jonas
Keyword(s):  
Quantum Dots ◽  
Indium Arsenide ◽  
Carrier Dynamics

Transient carrier dynamics of GaAs at room temperature

2020 ◽  
Vol 128 (1) ◽  
pp. 015706
Author(s):  
Xu-Chen Nie ◽  
Hai-Ying Song ◽  
Fan Li ◽  
Jian-Qiao Meng ◽  
Yu-Xia Duan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Carrier Dynamics

Study of the Radiative and Non-Radiative Recombination Processes at Dislocations in Silicon by Photoluminescence and LBIC Measurements

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Pizzini ◽  
S. Binetti ◽  
M. Acciarri ◽  
M. Casati
Keyword(s):  
Radiative Recombination ◽  
Room Temperature ◽  
Light Emission ◽  
Energy Levels ◽  
The Third ◽  
Optical Telecommunications ◽  
Recombination Processes ◽  
Metallic Impurities ◽  
Room Temperature Luminescence ◽  
Dislocation Related Luminescence

AbstractIt is well known that the sharp, room temperature luminescence emission at 1.54 μm from dislocated silicon has set off a great interest for this material in view of its applications in the third window of optical telecommunications. For this reason the dislocation related luminescence in silicon addressed recently a number of investigation aimed at understanding the mechanism of light emission. The problem is still unsolved as most of the experiments done gave contradictory answers to the main questions open, which concern the intrinsic or extrinsic nature of dislocation luminescence and the effect on it of reconstruction, interaction or passivation processes, possibly assisted by metallic or non-metallic impurities.In order to go more insight on the problem, we started a systematic work on CZ silicon, aimed at understanding the properties of dislocation luminescence. The identification of the energy levels involved in the different dislocation PL bands has been obtained.

Mechanism of suppression of Auger recombination processes in type‐II heterostructures

1995 ◽  
Vol 67 (18) ◽  
pp. 2681-2683 ◽  
Author(s):  
Georgy G. Zegrya ◽  
Aleksey D. Andreev
Keyword(s):  
Auger Recombination ◽  
Type Ii ◽  
Recombination Processes

A formalism for the indirect Auger effect. I

1976 ◽  
Vol 347 (1651) ◽  
pp. 547-564 ◽  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Energy Gap ◽  
Electron Collision ◽  
Recombination Coefficient ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Auger Effect ◽  
Ionization Rates

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1eV or greater, at room temperature, for direct gaps but is arbi­trary for indirect gaps. A recombination coefficient of 28.1 x 10 -32 cm 6 s -1 for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.

Radiative recombination processes of thermal donors in silicon

2001 ◽  
Vol 692 ◽  
Author(s):  
S. Pizzini ◽  
S. Binetti ◽  
E. Leoni ◽  
A. Le Donne ◽  
M. Acciarri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emission ◽  
Deep Level ◽  
Line Emission ◽  
Shallow Donor ◽  
Light Emitting ◽  
Microelectronic Technology ◽  
Recombination Processes ◽  
Transient Spectroscopy ◽  
Silicon Based

AbstractThere is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation.In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples.We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV ( P line), is correlated to a transition from a shallow donor level of OTD to a deep level at EV+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.

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