Study of the Radiative and Non-Radiative Recombination Processes at Dislocations in Silicon by Photoluminescence and LBIC Measurements

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Pizzini ◽  
S. Binetti ◽  
M. Acciarri ◽  
M. Casati
Keyword(s):  
Radiative Recombination ◽  
Room Temperature ◽  
Light Emission ◽  
Energy Levels ◽  
The Third ◽  
Optical Telecommunications ◽  
Recombination Processes ◽  
Metallic Impurities ◽  
Room Temperature Luminescence ◽  
Dislocation Related Luminescence

AbstractIt is well known that the sharp, room temperature luminescence emission at 1.54 μm from dislocated silicon has set off a great interest for this material in view of its applications in the third window of optical telecommunications. For this reason the dislocation related luminescence in silicon addressed recently a number of investigation aimed at understanding the mechanism of light emission. The problem is still unsolved as most of the experiments done gave contradictory answers to the main questions open, which concern the intrinsic or extrinsic nature of dislocation luminescence and the effect on it of reconstruction, interaction or passivation processes, possibly assisted by metallic or non-metallic impurities.In order to go more insight on the problem, we started a systematic work on CZ silicon, aimed at understanding the properties of dislocation luminescence. The identification of the energy levels involved in the different dislocation PL bands has been obtained.

Radiative recombination processes of thermal donors in silicon

2001 ◽  
Vol 692 ◽  
Author(s):  
S. Pizzini ◽  
S. Binetti ◽  
E. Leoni ◽  
A. Le Donne ◽  
M. Acciarri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emission ◽  
Deep Level ◽  
Line Emission ◽  
Shallow Donor ◽  
Light Emitting ◽  
Microelectronic Technology ◽  
Recombination Processes ◽  
Transient Spectroscopy ◽  
Silicon Based

AbstractThere is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation.In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples.We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV ( P line), is correlated to a transition from a shallow donor level of OTD to a deep level at EV+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.

scholarly journals Temperature-Dependent Photoluminescence of Manganese Halide with Tetrahedron Structure in Anti-Perovskites

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3310
Author(s):  
Yijie Xia ◽  
Shuaishuai Du ◽  
Pengju Huang ◽  
Luchao Wu ◽  
Siyu Yan ◽  
...  
Keyword(s):  
Energy Level ◽  
Recombination Rate ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Energy Levels ◽  
Radiative Recombination Rate ◽  
Temperature Dependent ◽  
Recombination Rates ◽  
Increasing Temperature ◽  
Temperature Dependent Photoluminescence

The temperature-dependent photoluminescence (PL) properties of an anti-perovskite [MnBr4]BrCs3 sample in the temperature range of 78–500 K are studied in the present work. This material exhibits unique performance which is different from a typical perovskite. Experiments showed that from room temperature to 78 K, the luminous intensity increased as the temperature decreased. From room temperature to 500 K, the photoluminescence intensity gradually decreased with increasing temperature. Experiments with varying temperatures repeatedly showed that the emission wavelength was very stable. Based on the above-mentioned phenomenon of the changing photoluminescence under different temperatures, the mechanism is deduced from the temperature-dependent characteristics of excitons, and the experimental results are explained on the basis of the types of excitons with different energy levels and different recombination rates involved in the steady-state PL process. The results show that in the measured temperature range of 78–500 K, the steady-state PL of [MnBr4]BrCs3 had three excitons with different energy levels and recombination rates participating. The involved excitons with the highest energy level not only had a high radiative recombination rate, but a high non-radiative recombination rate as well. The excitons at the second-highest energy level had a similar radiative recombination rate to the lowest energy level excitons and a had high non-radiative recombination rate. These excitons made the photoluminescence gradually decrease with increasing temperature. This may be the reason for this material’s high photoluminescence efficiency and low electroluminescence efficiency.

scholarly journals Nature of Radiative Recombination Processes in Layered Heterogeneous PbCdI2 Thick Films: Promising Scintillator Materials

2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
Anatolii P. Bukivskii ◽  
Yuriy P. Gnatenko ◽  
Yuri P. Piryatinski ◽  
Igor V. Fesych ◽  
Vasyl V. Lendel ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Room Temperature ◽  
Thick Films ◽  
Chemical Deposition ◽  
Surface States ◽  
Industrial Applications ◽  
Pl Spectra ◽  
Complex Crystal Structure ◽  
Recombination Processes ◽  
Scintillator Detectors

For the first time, PbCdI2 alloys in the form of thick films were prepared on a glass substrate using the conventional one-step chemical deposition method. The studies of the structural properties of these films showed that they have a very complex crystal structure, where PbI2 microcrystallites of micron and submicron sizes, as well as small nanoclusters (NCLs), are randomly formed in the CdI2 crystal matrix. It was found that the films show intense photo- and cathodoluminescence at room temperature. The temperature dependence of PL spectra of thick PbCdI2 films was studied. The nature of various radiative recombination processes in PbCdI2 films was established and it was shown that their PL spectra at room temperature are equally determined both by surface states in small PbI2 NCLs and by intrinsic defects in microcrystallites. The obtained PbCdI2 thick films can be considered as novel promising semiconductor materials for the development of effective inexpensive scintillator detectors for biomedical and industrial applications.

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

Crystal Structures of and Polarized Absorption-Spectroscopy in Racemic and Resolved [Ru(bpy)3] (ClO4)2 and [Zn(bpy)3] (ClO4)2Bpy=2,2'-Bipyridine

1995 ◽  
Vol 48 (5) ◽  
pp. 929 ◽  
Author(s):  
E Krausz ◽  
H Riesen ◽  
AD Rae
Keyword(s):  
Room Temperature ◽  
Energy Difference ◽  
Temperature Structure ◽  
Asymmetric Unit ◽  
Threefold Axis ◽  
Crystal Forms ◽  
The Third ◽  
Racemic Form ◽  
Ligand Charge Transfer ◽  
Dominant Influence

[Zn( bpy )3] (ClO4)2 and [ Ru ( bpy )3] (ClO4)2 are isomorphous in both their racemic and resolved crystal forms. The resolved materials are monohydrates and have a C 2, Z = 8, structure with two independent formula units on general sites in the asymmetric unit. The cations have the same chirality. The inherent threefold axis of each cation lies approximately parallel to the c axis. The unrelated racemic form has a C2/c, Z = 4, structure which is a commensurate modulation of a P3c1, Z = 2, parent structure, typified by the room-temperature structure of [ Ru ( bpy )3] (PF6)2. A primary, secondary and tertiary axis of P3c1 become the c, b and a axes respectively of C2/c, retaining a third of the symmetry elements of P3c1. The crystals grow as multiply contacted twins. This structure bas just one spectroscopic site with the cation lying on a twofold axis that passes through the metal and one of the bidendate ligands and relates the other two ligands to each other. This feature is particularly useful in the study of the optical spectroscopy of the metal-to- ligand charge transfer excitations of [ Ru ( bpy )3]2+ and related systems. A comparison of structural and spectral data indicates that the positions of the anions have a dominant influence on the relative energies of the metal-to- ligand excitations. An energy difference between excitations involving the two (lower-energy) equivalent ligands and the third ligand of the order of 800 cm-1 is indicated in both singlet and triplet regions for the racemic perchlorate. The absorption spectra of [ Ru ( bpy )3]2+and [Os( bpy )3]2+ in a number of crystalline hosts are compared and discussed.

The prediction of the cyclic mechanical behavior of stainless steel 304L at room temperature

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Hala Messai ◽  
Salim Meziani ◽  
Athmane Fouathia
Keyword(s):  
Stainless Steel ◽  
Design Methodology ◽  
Room Temperature ◽  
Type Model ◽  
Good Prediction ◽  
304L Stainless Steel ◽  
Content Type ◽  
The Third ◽  
Chaboche Model

Purpose The purpose of this paper is to highlight the performance of the Chaboche model in relation to the database identification, tests with imposed deformations were conducted at room temperature on 304L stainless steel specimens. Design/methodology/approach The first two tests were performed in tension-compression between ±0.005 and ±0.01; in the third test, each cycle is composed of the combination of a compression tensile cycle between ±0.01 followed by a torsion cycle between ±0.01723 (non-proportional path), and the last, uniaxial ratcheting test with a mean stress between 250 MPa and −150 MPa. Several identifications of a Chaboche-type model were then performed by considering databases composed of one or more of the cited tests. On the basis of these identifications, the simulations of a large number of ratchet tests in particular were carried out. Findings The results present the effect of the optimized parameters on the prediction of the behavior of materials which is reported in the graphs, Optimizations 1 and 2 of first and second tests and Optimization 4 of the third test giving a good prediction of the increasing/decreasing pre-deformation amplitude. Originality/value The quality of the model's predictions strongly depends on the richness of the database used for the identification of the parameters.

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