Transient carrier dynamics of GaAs at room temperature

2020 ◽  
Vol 128 (1) ◽  
pp. 015706
Author(s):  
Xu-Chen Nie ◽  
Hai-Ying Song ◽  
Fan Li ◽  
Jian-Qiao Meng ◽  
Yu-Xia Duan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Carrier Dynamics

Picosecond carrier dynamics and studies of Auger recombination processes in indium arsenide at room temperature

1992 ◽  
Vol 46 (20) ◽  
pp. 13194-13200 ◽  
Author(s):  
K. L. Vodopyanov ◽  
H. Graener ◽  
C. C. Phillips ◽  
T. J. Tate
Keyword(s):  
Indium Arsenide ◽  
Room Temperature ◽  
Auger Recombination ◽  
Carrier Dynamics ◽  
Recombination Processes

Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature

2001 ◽  
Vol 79 (16) ◽  
pp. 2633-2635 ◽  
Author(s):  
P. Borri ◽  
S. Schneider ◽  
W. Langbein ◽  
U. Woggon ◽  
A. E. Zhukov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Inas Quantum Dot

Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature

2012 ◽  
Vol 85 (3) ◽  
Author(s):  
S. Boubanga-Tombet ◽  
S. Chan ◽  
T. Watanabe ◽  
A. Satou ◽  
V. Ryzhii ◽  
...  
Keyword(s):  
Room Temperature ◽  
Carrier Dynamics ◽  
Optically Pumped ◽  
Terahertz Emission ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier

Near-Field Study of Carrier Dynamics in InAs/GaAs Quantum Dots Grown on InGaAs Layers

2005 ◽  
Vol 482 ◽  
pp. 151-154
Author(s):  
Pavel Tománek ◽  
Pavel Dobis ◽  
Markéta Benešová ◽  
Lubomír Grmela
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Near Field ◽  
Carrier Dynamics ◽  
Quantum Structures ◽  
Optical Study ◽  
Ordered Structure ◽  
Single Electron Transistors ◽  
First Results ◽  
Electron Transistors

InAs/GaAs quantum dots (QDs) with ordered structure, due to their peculiar properties, open new way to design novel semiconductor devices such as single-electron transistors or highly parallel computing architectures. The lateral quantum dot alignment achieved during the selfassembly process is not well understood heretofore. The reason is, that quantum structures areusually small and studied at low temperatures. Conversely, the Scanning near-field optical microscopy (SNOM) allows study nanometer details in the non-offensive manner, in the room temperature with high spatial and temporal resolution. The first results of near-field optical study on aligned QDs are presented.

scholarly journals Negative Photoconductive Effects in Uncooled InAs Nanowire Photodetectors

2021 ◽  
Vol 9 ◽  
Author(s):  
Xingfei Zhang ◽  
Yiyun Zhang ◽  
Dong Pan ◽  
Xiaoyan Yi ◽  
Jianhua Zhao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Narrow Band ◽  
Wide Spectrum ◽  
Carrier Dynamics ◽  
One Dimensional ◽  
Near Ir ◽  
Metal Semiconductor Metal ◽  
Decay Times ◽  
Inas Nanowires ◽  
Msm Structure

One-dimensional, direct, and narrow band gap indium arsenide (InAs) nanowires (NWs) have been emerging with great potentials for the next-generation wide-spectrum photodetectors. In this study, metal–semiconductor–metal (MSM) structure InAs NW-based photodetectors were fabricated by transferring MBE-grown NWs onto a sapphire substrate via a mechanical stamping method. These NW detectors exhibit strong negative photoconductive (NPC) effects, which are likely caused by the carrier dynamics in the “core-shell” structure of the NWs. Specifically, under the irradiation of a 405 nm violet laser, the maximum Idark/Ilight ratio reaches ∼102 and the NPC gain reaches 105 at a low bias voltage of 0.2 V. At room temperature, the rise and decay times of InAs NW devices are 0.005 and 2.645 s, respectively. These InAs NW devices with a high Idark/Ilight ratio and NPC gain can be potentially used in the field of vis/near-IR light communication in the future.

scholarly journals Carrier Dynamics in InGaN/GaN-Based Green LED under Different Excitation Sources

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1061
Author(s):  
Jianfei Li ◽  
Duo Chen ◽  
Kuilong Li ◽  
Qiang Wang ◽  
Mengyao Shi ◽  
...  
Keyword(s):  
Room Temperature ◽  
Multiple Quantum Well ◽  
Excitation Power ◽  
Carrier Dynamics ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Peak Energy ◽  
Measurement Results ◽  
Green Led ◽  
Electrical Generation

The excitation power and temperature dependence of the photoluminescence (PL) and electroluminescence (EL) spectra were studied in green InGaN/GaN multiple quantum well (MQW)-based light-emitting diodes (LED). An examination of the PL-325, PL-405, and EL spectra at identical optical or electrical generation rates at room temperature showed that the normalized spectra exhibited different characteristic peaks. In addition, the temperature behavior of the peak energy was S-shaped for the PL-405 spectrum, while it was V-shaped for the EL spectrum. These measurement results demonstrate that the excitation source can affect the carrier dynamics about the generation (injection), transfer, and distribution of carriers.

Effects of heavy-ion and light-ion irradiation on the room temperature carrier dynamics of InGaAs/GaAs quantum wells

2006 ◽  
Vol 21 (5) ◽  
pp. 661-664 ◽  
Author(s):  
V D S Dhaka ◽  
N V Tkachenko ◽  
H Lemmetyinen ◽  
E-M Pavelescu ◽  
M Guina ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Carrier Dynamics
Sign in / Sign up

Export Citation Format

Share Document