scholarly journals Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy

1992 ◽  
Vol 45 (7) ◽  
pp. 3372-3375 ◽  
Author(s):  
H. J. von Bardeleben ◽  
M. O. Manasreh ◽  
D. C. Look ◽  
K. R. Evans ◽  
C. E. Stutz
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Paramagnetic Resonance Study ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

Electron Paramagnetic Resonance Study of Low Temperature Molecular Beam Epitaxy Grown GaAs and InP Layers

1991 ◽  
Vol 241 ◽  
Author(s):  
H. J. von Bardeleben ◽  
Y. Q. Jia ◽  
J. P. Hirtz ◽  
J. C. Garcia ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Paramagnetic Resonance Study ◽  
Paramagnetic Resonance ◽  
Native Defects ◽  
Antisite Defects ◽  
High Concentrations ◽  
Electron Paramagnetic

ABSTRACTThe native defects in LTMBE III-V layers have been studied by the electron paramagnetic resonance (EPR) technique for three different systems: GaAs on GaAs, GaAs on Si and InP on InP. The GaAs layers are characterised by high concentrations of ionized arsenic antisite defects(1019 cm −3), with properties similar to those of the native AsGa in amorphous GaAs. Their variation with the growth temperature, layer thickness and thermal annealings has been assessed.The results are independant on the nature of the substrate, GaAs or Si. Inspite of a 1% phosphorous excess no phosphorous antisites could be detected in the as-grown, undoped or Be doped InP layers.

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