Low-temperature electron paramagnetic resonance study of the ferricytochrome c-cardiolipin complex

Biochemistry ◽  
1987 ◽  
Vol 26 (8) ◽  
pp. 2312-2314 ◽  
Author(s):  
James S. Vincent ◽  
Hideo Kon ◽  
Ira W. Levin
1972 ◽  
Vol 50 (10) ◽  
pp. 1048-1055 ◽  
Author(s):  
Colin Mailer ◽  
C. P. S. Taylor

Electron paramagnetic resonance (E.P.R.) spectra from single crystals of horse heart ferricytochrome c at 4.2 °K were analyzed to obtain the orientation of the principal g values relative to the crystallographic axes. The axis of the largest principal g value (g3 = 3.06) was within 5° of the heme normal direction reported in the X-ray structure of the same crystals (Dickerson et al.: J. Biol. Chem. 246, 1511 (1971)). The other two g axes (g1 = 1.25, g2 = 2.25) lie within 5° of the N–Fe–N directions in the heme ring, in contrast to met-myoglobin azide (Helcké et al.: Proc. R. Soc. B169, 275 (1968)) and cyanide (Blumberg, W. E.: personal communication) where they lie ~ 45° from the N–Fe–N directions. A version of Eisenberger and Pershan's theory (J. Chem. Phys. 47, 327 (1967)) was used to explain the 400–2000 G variation in linewidth on crystal rotation. The results were explained by combining the broadening produced by a distribution of rhombic crystal field potential (r.m.s. deviation 11%) over the molecular population, with that from a variation in the directions of the principal g values caused by misorientation (r.m.s. deviation 1.5°) of the molecules in the crystal.


2017 ◽  
Vol 274 ◽  
pp. 73-79 ◽  
Author(s):  
Ryhor Fedaruk ◽  
Roman Strzelczyk ◽  
Krzysztof Tadyszak ◽  
Siarhei A. Markevich ◽  
Maria Aldona Augustyniak-Jabłokow

1991 ◽  
Vol 241 ◽  
Author(s):  
H. J. von Bardeleben ◽  
Y. Q. Jia ◽  
J. P. Hirtz ◽  
J. C. Garcia ◽  
M. O. Manasreh ◽  
...  

ABSTRACTThe native defects in LTMBE III-V layers have been studied by the electron paramagnetic resonance (EPR) technique for three different systems: GaAs on GaAs, GaAs on Si and InP on InP. The GaAs layers are characterised by high concentrations of ionized arsenic antisite defects(1019 cm −3), with properties similar to those of the native AsGa in amorphous GaAs. Their variation with the growth temperature, layer thickness and thermal annealings has been assessed.The results are independant on the nature of the substrate, GaAs or Si. Inspite of a 1% phosphorous excess no phosphorous antisites could be detected in the as-grown, undoped or Be doped InP layers.


2000 ◽  
Vol 88 (3) ◽  
pp. 1587-1592 ◽  
Author(s):  
Yu. A. Koksharov ◽  
S. P. Gubin ◽  
I. D. Kosobudsky ◽  
M. Beltran ◽  
Y. Khodorkovsky ◽  
...  

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