Light- and heavy-hole free-exciton transitions in narrowInxGa1−xAs/GaAs quantum wells

1992 ◽  
Vol 45 (19) ◽  
pp. 11156-11160 ◽  
Author(s):  
D. C. Reynolds ◽  
K. R. Evans ◽  
C. E. Stutz ◽  
B. Jogai ◽  
C. R. Wie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Free Exciton ◽  
Exciton Transitions

Light- and Heavy-Hole Bound Exciton Transitions and Free to Bound Transitions in GaxAl1-xAs/GaAs Quantum Wells

1989 ◽  
Vol 163 ◽  
Author(s):  
Donald C. Reynolds ◽  
K.K. Bajaj
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Free Exciton ◽  
Light Hole ◽  
Binding Energies ◽  
Temperature Dependent ◽  
Neutral Donor ◽  
Free Hole ◽  
Quantum Well Structures ◽  
Exciton Transitions

AbstractExcitons bound to neutral donors in AlxGa1-xAs/GaAs quantum wells were observed by high resolution resonant excitation photoluminescence, and temperature dependent photoluminescence measurements. Changes in the binding energy of excitons are observed when the donors are located in the center of the well, at the edge of the well, or in the center of the barrier. The variations in these binding energies are reported as a function of well size from 75–350Å. The binding energies increased as the well size was reduced to about 100Å, with further reductions in well size they decreased.Light-hole free excitons bound to neutral donors were observed in AlxGa1-xAs/GaAs quantum wells. The transitions were observed, using selective excitation photoluminescence spectroscopy, in the energy region between the light-hole and heavy-hole free exciton transitions where no other intrinsic transitions exist. The neutral donor-bound heavy-hole free-exciton transitions were also observed when the light-hole bound exciton transitions were observed. Quantum well structures which showed no evidence of a heavy-hole donor bound exciton also showed no evidence of a light-hole donor bound exciton.Free to bound transitions, free hole to bound electron, have also been observed in the AlxGa1-xAs/GaAs quantum wells. The diamagnetic shift of these transitions was used to distinguish them from excitonic transitions.

Modulated Reflectance Spectroscopy of CdTe-Cd1−xMnxTe Multiple Quantum Wells and Superlattices Grown by Pulsed Laser Evaporation and Epitaxy

1992 ◽  
Vol 285 ◽  
Author(s):  
D. Labrie ◽  
J.J. Dubowski
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Free Exciton ◽  
Multiple Quantum Well ◽  
Pulsed Laser ◽  
Reflectance Spectroscopy ◽  
Light Hole ◽  
Laser Evaporation ◽  
Multiple Quantum ◽  
Superlattice Structures

ABSTRACTPiezoreflectance and photoreflectance spectroscopies have been used to investigate the electronic properties of CdTe-Cd1-xMnxTe (x − 0.10) multiple quantum well and superlattice structures grown by Pulsed Laser Evaporation and Epitaxy (PLEE). The structures with the CdTe well widths from 54Å to 245Å have been investigated. The spectra exhibit a series of signatures which are attributed to free exciton transitions occuring between the heavy-hole and light-hole bands and the upper electron subbands within the CdTe well layers. The spectra indicate that the PLEE grown structures are of an excellent quality typical of the best currently available material.

Free-to-bound and light- and heavy-hole bound-exciton transitions inAlxGa1−xAs-GaAs multiple quantum wells

1991 ◽  
Vol 43 (2) ◽  
pp. 1604-1609 ◽  
Author(s):  
D. C. Reynolds ◽  
K. G. Merkel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
K. K. Bajaj ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Transitions

Excited quantum states in CdTe–Cd1−x MnxTe multiple quantum wells and superlattices grown by pulsed laser evaporation and epitaxy

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1027-1034 ◽  
Author(s):  
D. Labrie ◽  
X. Wang ◽  
J. J. Dubowski
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Free Exciton ◽  
Pulsed Laser ◽  
Light Hole ◽  
Multiple Quantum Wells ◽  
Laser Evaporation ◽  
Multiple Quantum ◽  
Transition Energies ◽  
Line Positions

The photoreflectance and piezoreflectance spectra of CdTe–Cd0.9Mn0.1 Te multiple quantum wells and superlattices grown by pulsed laser evaporation and epitaxy display series of signatures that are attributed to free exciton transitions occurring between the heavy-hole and light-hole bands, and the upper electron subbands. The signature line positions are in excellent agreement with calculated transition energies obtained from a simple Kronig–Penney model that includes strain effects and the nonparabolicity of the conduction band.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

Exchange splitting of the heavy hole exciton ground state in GaAs-GaAlAs quantum wells

1990 ◽  
Vol 229 (1-3) ◽  
pp. 151-154 ◽  
Author(s):  
M. Potemski ◽  
J.C. Maan ◽  
A. Fasolino ◽  
K. Ploog ◽  
G. Weimann
Keyword(s):  
Quantum Wells ◽  
Ground State ◽  
Heavy Hole ◽  
Exchange Splitting ◽  
Exciton Ground State

Polarization selection rules for quantum beating between light- and heavy-hole excitons in GaAs quantum wells

1995 ◽  
Vol 94 (5) ◽  
pp. 373-377 ◽  
Author(s):  
G.O. Smith ◽  
E.J. Mayer ◽  
V. Heuckeroth ◽  
J. Kuhl ◽  
K. Bott ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Selection Rules
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