Excited quantum states in CdTe–Cd1−x MnxTe multiple quantum wells and superlattices grown by pulsed laser evaporation and epitaxy

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1027-1034 ◽  
Author(s):  
D. Labrie ◽  
X. Wang ◽  
J. J. Dubowski
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Free Exciton ◽  
Pulsed Laser ◽  
Light Hole ◽  
Multiple Quantum Wells ◽  
Laser Evaporation ◽  
Multiple Quantum ◽  
Transition Energies ◽  
Line Positions

The photoreflectance and piezoreflectance spectra of CdTe–Cd0.9Mn0.1 Te multiple quantum wells and superlattices grown by pulsed laser evaporation and epitaxy display series of signatures that are attributed to free exciton transitions occurring between the heavy-hole and light-hole bands, and the upper electron subbands. The signature line positions are in excellent agreement with calculated transition energies obtained from a simple Kronig–Penney model that includes strain effects and the nonparabolicity of the conduction band.

Modulated Reflectance Spectroscopy of CdTe-Cd1−xMnxTe Multiple Quantum Wells and Superlattices Grown by Pulsed Laser Evaporation and Epitaxy

1992 ◽  
Vol 285 ◽  
Author(s):  
D. Labrie ◽  
J.J. Dubowski
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Free Exciton ◽  
Multiple Quantum Well ◽  
Pulsed Laser ◽  
Reflectance Spectroscopy ◽  
Light Hole ◽  
Laser Evaporation ◽  
Multiple Quantum ◽  
Superlattice Structures

ABSTRACTPiezoreflectance and photoreflectance spectroscopies have been used to investigate the electronic properties of CdTe-Cd1-xMnxTe (x − 0.10) multiple quantum well and superlattice structures grown by Pulsed Laser Evaporation and Epitaxy (PLEE). The structures with the CdTe well widths from 54Å to 245Å have been investigated. The spectra exhibit a series of signatures which are attributed to free exciton transitions occuring between the heavy-hole and light-hole bands and the upper electron subbands within the CdTe well layers. The spectra indicate that the PLEE grown structures are of an excellent quality typical of the best currently available material.

Excitation-induced phase shifts of heavy- and light-hole quantum beats in GaAs/AlxGa1−xAs multiple quantum wells

1995 ◽  
Vol 51 (7) ◽  
pp. 4242-4246 ◽  
Author(s):  
A. E. Paul ◽  
W. Sha ◽  
Shekhar Patkar ◽  
Arthur L. Smirl
Keyword(s):  
Quantum Wells ◽  
Phase Shifts ◽  
Light Hole ◽  
Multiple Quantum Wells ◽  
Quantum Beats ◽  
Multiple Quantum

PHOTOCONDUCTIVITY, PHOTOREFLECTANCE AND PHOTOLUMINESCENCE OF GaAs-AlAs MULTIPLE QUANTUM WELLS

1985 ◽  
Vol 56 ◽  
Author(s):  
H. NEFF ◽  
K. J. BACHMANN ◽  
W. D. LAIDIG
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Heavy Hole ◽  
Multiple Quantum Well ◽  
Light Hole ◽  
Multiple Quantum ◽  
Indirect Transition ◽  
Temperature Dependent ◽  
Direct Inter ◽  
Phonon Absorption

AbstractEmploying temperature dependent photoconductivity, photoluminescence and photoreflectivity measurements, we have analyzed a GaAs-AlAs multiple quantum well. The above optical techniques clearly resolve the fundamental inter-subband transitions, including heavy hole-light hole splittings. At T < 60K an anomalously high photoconductivity was discovered below the direct inter-subband transitions and is attributed tentatively to the presence of extrinsic interface states within the bandgap. For T > l00K the fundamental indirect transition was discovered and associated with LO (L) - phonon absorption.

Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition

2010 ◽  
Vol 108 (7) ◽  
pp. 073504 ◽  
Author(s):  
T. S. Ko ◽  
T. C. Lu ◽  
L. F. Zhuo ◽  
W. L. Wang ◽  
M. H. Liang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multiple Quantum Wells ◽  
Optical Characteristics ◽  
Multiple Quantum
Sign in / Sign up

Export Citation Format

Share Document