Effects of surface band bending on low-energy photon-induced oxidation of GaAs(110)

1991 ◽  
Vol 43 (14) ◽  
pp. 12086-12089 ◽  
Author(s):  
Y. Chen ◽  
F. Stepniak ◽  
J. M. Seo ◽  
S. E. Harvey ◽  
J. H. Weaver
Keyword(s):  
Low Energy ◽  
Energy Photon ◽  
Surface Band ◽  
Band Bending

Modification of surface band bending of diamond by low energy argon and carbon ion bombardment

1994 ◽  
Vol 75 (7) ◽  
pp. 3385-3391 ◽  
Author(s):  
W. M. Lau ◽  
L. J. Huang ◽  
I. Bello ◽  
Y. M. Yiu ◽  
S.‐T. Lee
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Surface Band ◽  
Band Bending ◽  
Carbon Ion

scholarly journals Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

2021 ◽  
Vol 5 (4) ◽  
Author(s):  
Regina Ariskina ◽  
Michael Schnedler ◽  
Pablo D. Esquinazi ◽  
Ana Champi ◽  
Markus Stiller ◽  
...  
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Surface Band ◽  
Band Bending ◽  
Atomic Force

Evidence of nitric-oxide-induced surface band bending of indium tin oxide

2004 ◽  
Vol 95 (11) ◽  
pp. 6273-6276 ◽  
Author(s):  
Jianqiao Hu ◽  
Jisheng Pan ◽  
Furong Zhu ◽  
Hao Gong
Keyword(s):  
Nitric Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Surface Band ◽  
Band Bending

EDR2 film dosimetry for IMRT verification using low-energy photon filters

2004 ◽  
Vol 31 (7) ◽  
pp. 1960-1963 ◽  
Author(s):  
Inhwan Jason Yeo ◽  
Akbar Beiki-Ardakani ◽  
Young-bin Cho ◽  
Mostafa Heydarian ◽  
Ting Zhang ◽  
...  
Keyword(s):  
Low Energy ◽  
Film Dosimetry ◽  
Energy Photon ◽  
Edr2 Film ◽  
Imrt Verification

Surface band bending and carrier dynamics in colloidal quantum dot solids

Nanoscale ◽  
2021 ◽  
Author(s):  
Pip C. J. Clark ◽  
Nathan K Lewis ◽  
Chun-Ren Ke ◽  
Rubén Ahumada-Lazo ◽  
Qian Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carrier Dynamics ◽  
Charge Carriers ◽  
Surface Band ◽  
Band Bending ◽  
Colloidal Quantum Dot ◽  
Band Alignments

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device....

The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions

2007 ◽  
Vol 1026 ◽  
Author(s):  
Augustus K. W. Chee ◽  
Conny Rodenburg ◽  
Colin John Humphreys
Keyword(s):  
Oxide Layer ◽  
Computer Modelling ◽  
Surface States ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Element Analysis ◽  
Surface Band ◽  
Band Bending ◽  
Wide Range ◽  
Se Doping

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.

scholarly journals Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

2004 ◽  
Vol 84 (16) ◽  
pp. 3070-3072 ◽  
Author(s):  
Sang-Jun Cho ◽  
Seydi Doğan ◽  
Shahriar Sabuktagin ◽  
Michael A. Reshchikov ◽  
Daniel K. Johnstone ◽  
...  
Keyword(s):  
Surface Potential ◽  
Electric Force ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Electric Force Microscopy
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