scholarly journals Core excitons and conduction-band structures in orthorhombic GeS, GeSe, SnS, and SnSe single crystals

1990 ◽  
Vol 42 (6) ◽  
pp. 3634-3643 ◽  
Author(s):  
M. Taniguchi ◽  
R. L. Johnson ◽  
J. Ghijsen ◽  
M. Cardona
Keyword(s):  
Single Crystals ◽  
Conduction Band ◽  
Band Structures

Conduction-band and valence-band structures in strainedIn1−xGaxAs/InP quantum wells on (001) InP substrates

1993 ◽  
Vol 48 (11) ◽  
pp. 8102-8118 ◽  
Author(s):  
Mitsuru Sugawara ◽  
Niroh Okazaki ◽  
Takuya Fujii ◽  
Susumu Yamazaki
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Structures ◽  
Inp Substrates

Electron scattering in the Δ1 model of the conduction band of germanium single crystals

2015 ◽  
Vol 49 (5) ◽  
pp. 574-578 ◽  
Author(s):  
S. V. Luniov ◽  
O. V. Burban ◽  
P. F. Nazarchuk
Keyword(s):  
Single Crystals ◽  
Conduction Band ◽  
Electron Scattering

Seebeck coefficient of quasi-two-dimensional SnSxSe2−x crystals

1985 ◽  
Vol 63 (11) ◽  
pp. 1405-1408 ◽  
Author(s):  
Y. Frongillo ◽  
M. Aubin ◽  
S. Jandl
Keyword(s):  
Seebeck Coefficient ◽  
Single Crystals ◽  
Conduction Band ◽  
Hall Coefficient ◽  
Large Temperature ◽  
Two Dimensional ◽  
Bridgman Technique ◽  
Absolute Value ◽  
Conduction Mechanisms ◽  
Iodine Transport

We have measured the Seebeck coefficient of quasi-two-dimensional single crystals of SnSe2, SnS0.1Se1.9, and SnS0.3Se1.7, grown by the Bridgman technique, and SnSe2, grown by iodine transport, over a large temperature range varying from 15 (4.2 for SnSe2) to 300 K. To assist in the interpretation of these results, the Hall coefficient and resistivity were measured on SnSe2 and SnS0.1Se1.9 Bridgman samples. All these measurements were done in a plane perpendicular to the c axis. It was found that, as the temperature decreases, the absolute value of the Seebeck coefficient decreases slightly before a surprisingly large increase at the lowest temperatures. We interpret these results as the manifestation of two conduction mechanisms: electrons in the conduction band and hopping of electrons between impurities.

scholarly journals Photoelectron spectroscopy on single crystals of organic semiconductors: experimental electronic band structure for optoelectronic properties

2020 ◽  
Vol 8 (27) ◽  
pp. 9090-9132 ◽  
Author(s):  
Yasuo Nakayama ◽  
Satoshi Kera ◽  
Nobuo Ueno
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Band Structures ◽  
Electronic Band ◽  
Hybrid Perovskite ◽  
Electronic Band Structures

Methodologies and experimental achievements for exploration into electronic band structures of organic semiconductor and hybrid perovskite single crystals are reviewed.

Localization of conduction-band electrons in β ″-(BEDT-TTF)4NH4[ Cr (C2O4)3] . DMF single crystals

2004 ◽  
Vol 114 ◽  
pp. 335-337 ◽  
Author(s):  
R. B. Morgunov ◽  
A. A. Baskakov ◽  
L. R. Dunin-Barkovskiy ◽  
S. S. Khasanov ◽  
R. P. Shibaeva ◽  
...  
Keyword(s):  
Single Crystals ◽  
Conduction Band

Core excitons and conduction-band structures in layered semiconductor black phosphorus

1984 ◽  
Vol 30 (8) ◽  
pp. 4555-4563 ◽  
Author(s):  
M. Taniguchi ◽  
S. Suga ◽  
M. Seki ◽  
A. Mikuni ◽  
S. Asaoka ◽  
...  
Keyword(s):  
Conduction Band ◽  
Black Phosphorus ◽  
Layered Semiconductor ◽  
Band Structures

scholarly journals Mechanism of luminescence and efficient energy storage in Lu2SiO5 : Ce3+single crystals

2020 ◽  
Vol 23 (3) ◽  
pp. 177-185
Author(s):  
V. A. Tedzhetov ◽  
A. V. Podkopaev ◽  
A. A. Sysoev
Keyword(s):  
Single Crystals ◽  
Conduction Band ◽  
High Energy ◽  
Energy Structure ◽  
Optical Transitions ◽  
Thermally Stimulated Luminescence ◽  
Excitation Energies ◽  
Absorption Bands ◽  
Electron Traps ◽  
Extrinsic Absorption

The development of high energy physics and medicine has raised the necessity of heavy stintillating materials with a large total gamma quantum absorption cross-section, high quantum output and fast response. Cerium doped lutetium silicate Lu2SiO5 : Ce3+ (LSO) has high density, large effective atomic number and high conversion efficiency. In this work we have reported optical absorption spectroscopy and photoluminescence data for LSO single crystals grown using the modified Musatov method. The absorption spectra show the fundamental intrinsic absorption edge of Lu2SiO5 at ~200 nm and four extrinsic absorption bands of Ce3+ activator near 250—375 nm. The band gap is 6.19 to 6.29 eV depending on optical beam direction. We have confirmed that the extrinsic absorption bands correspond to optical transitions in Ce3+ activator ions localized in two crystallographically non-equivalent CeI and CeII positions. We have estimated that oscillator force for the optical transitions in Ce3+ ions. The photoluminescence spectra excited by 3.49 eV photon energy UV laser contain three bands: ~2.96 eV, ~3.13 eV (CeI) and ~2.70 eV (CeII). The energy structure of electron traps in LSO has been studied with thermally stimulated luminescence, the crystals being exposed to UV with different spectral and energy parameters. All the experimental thermally stimulated luminescence curves contain at least two peaks at 345 and 400 K with a 4 : 1 intensity ratio attributable to electron traps at 0.92—0.96 and1.12—1.18 eV. LSO exposure to high pressure mercury lamp radiation having the highest energy has for the first time showed the presence of traps at 0.88 eV. A model of the energy structure of LSO has been developed. The luminescence mechanism in the material is more complex than purely intracenter one. We show that high excitation energies may lead to ionization by the mechanism hva + Ce3+ = Ce4+ + e-. We have assumed that the storage of excitation energy involves not only Ce3+ activator but also the conduction band as well as trap states localized near the conduction band.

Sign in / Sign up

Export Citation Format

Share Document