scholarly journals Photoelectron spectroscopy on single crystals of organic semiconductors: experimental electronic band structure for optoelectronic properties

2020 ◽  
Vol 8 (27) ◽  
pp. 9090-9132 ◽  
Author(s):  
Yasuo Nakayama ◽  
Satoshi Kera ◽  
Nobuo Ueno
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Band Structures ◽  
Electronic Band ◽  
Hybrid Perovskite ◽  
Electronic Band Structures

Methodologies and experimental achievements for exploration into electronic band structures of organic semiconductor and hybrid perovskite single crystals are reviewed.

scholarly journals Angle-Resolved Photoemission Study on the Band Structure of Organic Single Crystals

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 773
Author(s):  
Ke Wang ◽  
Ben Ecker ◽  
Yongli Gao
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Electronic Band Structure ◽  
Inorganic Materials ◽  
Strong Electron ◽  
Electronic Band ◽  
Valence Bands ◽  
Energy And Momentum ◽  
Photoemission Study

Angle-resolved photoemission spectroscopy (ARPES) is a vital technique, collecting data from both the energy and momentum of photoemitted electrons, and is indispensable for investigating the electronic band structure of solids. This article provides a review on ARPES studies of the electronic band structure of organic single crystals, including organic charge transfer conductors; organic semiconductors; and organo-metallic perovskites. In organic conductors and semiconductors, band dispersions are observed that are highly anisotropic. The Van der Waals crystal nature, the weak electron wavefunction overlap, as well as the strong electron-phonon coupling result in many organic crystals having indiscernible dispersion. In comparison, organo-metallic perovskite halides are characterized by strong s-p orbitals from the metal and halide at the top of the valence bands, with dispersions similar to those in inorganic materials.

Tuning the electronic band structure of microporous titanates with the hollandite structure

2015 ◽  
Vol 3 (40) ◽  
pp. 20330-20337 ◽  
Author(s):  
Pouya Moetakef ◽  
Limin Wang ◽  
Annalise E. Maughan ◽  
Karen J. Gaskell ◽  
Amber M. Larson ◽  
...  
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Type Structure ◽  
Band Structures ◽  
Electronic Band ◽  
Electronic Band Structures

We present the electronic band structures of microporous titanates with the hollandite-type structure.

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Band Structure ◽  
Single Crystals ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Photoemission Study

scholarly journals Momentum-resolved electronic band structure and offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

2021 ◽  
Author(s):  
Tianlun Yu ◽  
John Wright ◽  
Guru Khalsa ◽  
Betül Pamuk ◽  
Celesta Chang ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Optical Measurements ◽  
First Principles Calculations ◽  
Electronic Band ◽  
Band Bending ◽  
Interfacial States ◽  
Experimental Findings ◽  
Electronic Band Structures

Abstract The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituents of this Schottky heterointerface, and determine their momentum-dependent interfacial band offset as well as the band-bending profile into GaN. We find, in particular, that the Fermi states in NbN are aligned against the band gap in GaN, which excludes any significant electronic cross-talk of the superconducting states in NbN through the interface to GaN. We support the experimental findings with first-principles calculations for bulk NbN and GaN. The Schottky barrier height obtained from photoemission is corroborated by electronic transport and optical measurements. The momentum-resolved understanding of electronic properties elucidated by the combined materials advances and experimental methods in our work opens up new possibilities in systems where interfacial states play a defining role.

Electronic Band Structure of C8Cs Studied by Highly-Angle-Resolved Ultraviolet Photoelectron Spectroscopy

1987 ◽  
Vol 56 (7) ◽  
pp. 2581-2589 ◽  
Author(s):  
Nihal Gunasekara ◽  
Takashi Takahashi ◽  
Fumihiko Maeda ◽  
Takasi Sagawa ◽  
Hiroyoshi Suematsu
Keyword(s):  
Band Structure ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Electronic Band

scholarly journals The occupied electronic structure of ultrathin boron doped diamond

2020 ◽  
Vol 2 (3) ◽  
pp. 1358-1364
Author(s):  
A. C. Pakpour-Tabrizi ◽  
A. K. Schenk ◽  
A. J. U. Holt ◽  
S. K. Mahatha ◽  
F. Arnold ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Diamond Film ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Boron Doped Diamond ◽  
Electronic Band ◽  
Boron Doped

Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm).

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