Metastable effects in hydrogenated amorphous silicon–silicon nitride multilayers

Yoon-Ho Song; Chong-Chan Eun; Choochon Lee; Jin Jang

doi:10.1103/physrevb.42.11862

Metastable effects in hydrogenated amorphous silicon–silicon nitride multilayers

Physical Review B ◽

10.1103/physrevb.42.11862 ◽

1990 ◽

Vol 42 (18) ◽

pp. 11862-11868 ◽

Cited By ~ 2

Author(s):

Yoon-Ho Song ◽

Chong-Chan Eun ◽

Choochon Lee ◽

Jin Jang

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Metastable Effects ◽

Hydrogenated Amorphous ◽

Silicon Silicon

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Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors

Journal of Applied Physics ◽

10.1063/1.343361 ◽

1989 ◽

Vol 65 (10) ◽

pp. 3951-3957 ◽

Cited By ~ 105

Author(s):

Naftali Lustig ◽

Jerzy Kanicki

Keyword(s):

Thin Film ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Hydrogenated Amorphous Silicon ◽

Hydrogenated Amorphous ◽

Silicon Silicon ◽

Contact Effects

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Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen

Physical Review B ◽

10.1103/physrevb.36.6217 ◽

1987 ◽

Vol 36 (11) ◽

pp. 6217-6220 ◽

Cited By ~ 115

Author(s):

W. B. Jackson ◽

M. D. Moyer

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Interface Defects ◽

Hydrogenated Amorphous ◽

Silicon Silicon

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Longitudinal electron transport in hydrogenated amorphous silicon/silicon nitride multilayer structures

Applied Physics Letters ◽

10.1063/1.103284 ◽

1990 ◽

Vol 56 (3) ◽

pp. 259-261 ◽

Cited By ~ 2

Author(s):

R. Hattori ◽

J. Shirafuji

Keyword(s):

Silicon Nitride ◽

Electron Transport ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Multilayer Structures ◽

Hydrogenated Amorphous ◽

Silicon Silicon

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Longitudinal electron drift mobility of hydrogenated amorphous silicon/silicon nitride multilayer structures revealed by time‐of‐flight measurements

Applied Physics Letters ◽

10.1063/1.101478 ◽

1989 ◽

Vol 54 (12) ◽

pp. 1118-1120 ◽

Cited By ~ 12

Author(s):

R. Hattori ◽

J. Shirafuji

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Drift Mobility ◽

Multilayer Structures ◽

Electron Drift ◽

Hydrogenated Amorphous ◽

Flight Measurements ◽

Silicon Silicon ◽

Electron Drift Mobility

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Localized density of states in hydrogenated amorphous silicon/silicon nitride interfaces studied by transient voltage spectroscopy

Journal of Applied Physics ◽

10.1063/1.363634 ◽

1996 ◽

Vol 80 (10) ◽

pp. 5786-5790 ◽

Cited By ~ 4

Author(s):

G. Kawachi ◽

M. Ishii ◽

N. Konishi

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Density Of States ◽

Hydrogenated Amorphous Silicon ◽

Transient Voltage ◽

Hydrogenated Amorphous ◽

Silicon Silicon

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Optimal hydrogenated amorphous silicon/silicon nitride bilayer passivation of n-type crystalline silicon using response surface methodology

Applied Physics Letters ◽

10.1063/1.4764011 ◽

2012 ◽

Vol 101 (17) ◽

pp. 171602 ◽

Cited By ~ 8

Author(s):

Dmitri S. Stepanov ◽

Nazir P. Kherani

Keyword(s):

Response Surface Methodology ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Response Surface ◽

Crystalline Silicon ◽

Hydrogenated Amorphous Silicon ◽

Hydrogenated Amorphous ◽

Silicon Silicon

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Metastable defects in hydrogenated amorphous silicon nitride

10.31979/etd.455y-6kvb ◽

1992 ◽

Author(s):

Elaheh Sigari

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Nitride ◽

Hydrogenated Amorphous

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Thermal annealing of light−induced metastable defects in hydrogenated amorphous silicon nitride

Applied Physics Letters ◽

10.1063/1.106230 ◽

1991 ◽

Vol 59 (14) ◽

pp. 1723-1725 ◽

Cited By ~ 44

Author(s):

E. D. Tober ◽

J. Kanicki ◽

M. S. Crowder

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Thermal Annealing ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Nitride ◽

Hydrogenated Amorphous

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Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy

Journal of Applied Physics ◽

10.1063/1.370604 ◽

1999 ◽

Vol 85 (11) ◽

pp. 7899-7904 ◽

Cited By ~ 31

Author(s):

J. Bandet ◽

B. Despax ◽

M. Caumont

Keyword(s):

Raman Spectroscopy ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Local Order ◽

Amorphous Silicon Nitride ◽

Silicon Nitride Films ◽

Hydrogenated Amorphous

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Hydrogenated amorphous-silicon-nitride-based photonic light-emitting devices

10.1117/12.382796 ◽

2000 ◽

Author(s):

Ali Serpenguzel

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Light Emitting ◽

Amorphous Silicon Nitride ◽

Light Emitting Devices ◽

Hydrogenated Amorphous

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