Optimal hydrogenated amorphous silicon/silicon nitride bilayer passivation of n-type crystalline silicon using response surface methodology

2012 ◽  
Vol 101 (17) ◽  
pp. 171602 ◽  
Author(s):  
Dmitri S. Stepanov ◽  
Nazir P. Kherani
1991 ◽  
Vol 219 ◽  
Author(s):  
J. Kanicki ◽  
C. Godet ◽  
A. V. Gelatos

ABSTRACTThe effects of positive and negative bias stress on hydrogenated amorphous silicon nitride / crystalline silicon and hydrogenated amorphous silicon nitride / hydrogenated amorphous silicon (a-Si:H) structures are investigated as a function of stress time, stress temperature and stress bias. It is shown that in both structures bias stress induces a parallel shift of the C-V (capacitance-voltage) characteristics. For a given stress bias the direction of the C-V shift depends on the sign of the applied stress voltage, while the magnitude of the C-V shift depends on stress time and temperature. In addition, it is shown that positive bias stress slightly increases the number of localized states in the a-Si:H mobility gap, but negative bias stress does not. These results lead us to conclude that the C-V shift is not induced by dangling bond defects in a-Si:H but rather by carrier trapping in the insulator.


1990 ◽  
Vol 42 (18) ◽  
pp. 11862-11868 ◽  
Author(s):  
Yoon-Ho Song ◽  
Chong-Chan Eun ◽  
Choochon Lee ◽  
Jin Jang

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