Microscopic structure of hydrogen–shallow-donor complexes in crystalline silicon

1990 ◽  
Vol 41 (6) ◽  
pp. 3882-3884 ◽  
Author(s):  
S. B. Zhang ◽  
D. J. Chadi
Keyword(s):  
Crystalline Silicon ◽  
Shallow Donor ◽  
Microscopic Structure

TEM Study and Hall Measurement of nc-Si Prepared by Controlled Deposition

1992 ◽  
Vol 283 ◽  
Author(s):  
Masami Nakata ◽  
Isamu Shimizu
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism ◽  
Crystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Dominant Factor ◽  
Microscopic Structure ◽  
Hall Effect Measurements ◽  
Sample Structure ◽  
Controlled Deposition ◽  
General Transport

ABSTRACTWe report the results of a study in which we combined growth experiments with measurements of the nc-structure and of electrical transport Samples were prepared by plasma enhanced-CVD using SiF4 and H2 gases. We also added PH3 and H2 as control parameters for structural change. The microscopic structure was directly observed by TEM. Electron transport in nc-Si was investigated by Hall effect measurements performed at temperatures from 100K to 400K. We produced samples in which the Hall mobility was applied from general transport mechanism of poly crystalline silicon. However, from TEM observation, we conclude that dominant factor on electrical transport strongly depends on the sample structure, and nanocrystalline-silicon structure is so varied as to make it difficult to determine the transport mechanism without the observation of the microscopic structure.

Microscopic Structure of Er-Related Optically Active Centers in Crystalline Silicon

2003 ◽  
Vol 90 (6) ◽  
Author(s):  
N. Q. Vinh ◽  
H. Przybylińska ◽  
Z. F. Krasil’nik ◽  
T. Gregorkiewicz
Keyword(s):  
Crystalline Silicon ◽  
Optically Active ◽  
Microscopic Structure ◽  
Active Centers

scholarly journals Microscopic structure of the hydrogen-phosphorus complex in crystalline silicon

1990 ◽  
Vol 41 (6) ◽  
pp. 3885-3888 ◽  
Author(s):  
P. J. H. Denteneer ◽  
C. G. Van de Walle ◽  
S. T. Pantelides
Keyword(s):  
Crystalline Silicon ◽  
Microscopic Structure

Microscopic structure of boron-hydrogen complexes in crystalline silicon

1988 ◽  
Vol 38 (17) ◽  
pp. 12668-12671 ◽  
Author(s):  
C. P. Herrero ◽  
M. Stutzmann
Keyword(s):  
Crystalline Silicon ◽  
Microscopic Structure

scholarly journals Microscopic structure of the hydrogen-boron complex in crystalline silicon

1989 ◽  
Vol 39 (15) ◽  
pp. 10809-10824 ◽  
Author(s):  
P. J. H. Denteneer ◽  
C. G. Van de Walle ◽  
S. T. Pantelides
Keyword(s):  
Crystalline Silicon ◽  
Microscopic Structure ◽  
Boron Complex

Precipitation of hydrogen in crystalline silicon

1988 ◽  
Vol 46 ◽  
pp. 476-477
Author(s):  
F. A. Ponce ◽  
N. M. Johnson
Keyword(s):  
Electrical Activity ◽  
Single Crystals ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Shallow Donor ◽  
Time Intervals ◽  
Shallow Acceptor ◽  
Optical Isolation ◽  
Direct Exposure

The behavior of hydrogen in semiconductors has been a topic of increasing interest in recent years. The interest is in part stimulated by the ability of hydrogen to remove the electrical activity (passivate) of both dopant impurities and deep-level defects at moderate temperatures (<300C). Hydrogen is known to readily diffuse in silicon resulting in the neutralization of shallow-acceptor and shallow-donor dopants, Controlled studies of the role of hydrogen in silicon has been recently reported. This was achieved by exposing silicon single crystals to monoatomic hydrogen or deuterium from a microwave gas discharge. To prevent the radiation damage that results from direct exposure to the plasma, the specimens were mounted on a hot stage that was located down stream from the plasma. Optical isolation was achieved with the use of baffles. The specimen temperature was held constant in the range of 100-400°C for time intervals between 10-120 minutes.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

Sign in / Sign up

Export Citation Format

Share Document