Microscopic structure of boron-hydrogen complexes in crystalline silicon

1988 ◽  
Vol 38 (17) ◽  
pp. 12668-12671 ◽  
Author(s):  
C. P. Herrero ◽  
M. Stutzmann
Keyword(s):  
Crystalline Silicon ◽  
Microscopic Structure

TEM Study and Hall Measurement of nc-Si Prepared by Controlled Deposition

1992 ◽  
Vol 283 ◽  
Author(s):  
Masami Nakata ◽  
Isamu Shimizu
Keyword(s):  
Electrical Transport ◽  
Transport Mechanism ◽  
Crystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Dominant Factor ◽  
Microscopic Structure ◽  
Hall Effect Measurements ◽  
Sample Structure ◽  
Controlled Deposition ◽  
General Transport

ABSTRACTWe report the results of a study in which we combined growth experiments with measurements of the nc-structure and of electrical transport Samples were prepared by plasma enhanced-CVD using SiF4 and H2 gases. We also added PH3 and H2 as control parameters for structural change. The microscopic structure was directly observed by TEM. Electron transport in nc-Si was investigated by Hall effect measurements performed at temperatures from 100K to 400K. We produced samples in which the Hall mobility was applied from general transport mechanism of poly crystalline silicon. However, from TEM observation, we conclude that dominant factor on electrical transport strongly depends on the sample structure, and nanocrystalline-silicon structure is so varied as to make it difficult to determine the transport mechanism without the observation of the microscopic structure.

Microscopic Structure of Er-Related Optically Active Centers in Crystalline Silicon

2003 ◽  
Vol 90 (6) ◽  
Author(s):  
N. Q. Vinh ◽  
H. Przybylińska ◽  
Z. F. Krasil’nik ◽  
T. Gregorkiewicz
Keyword(s):  
Crystalline Silicon ◽  
Optically Active ◽  
Microscopic Structure ◽  
Active Centers

scholarly journals Microscopic structure of the hydrogen-phosphorus complex in crystalline silicon

1990 ◽  
Vol 41 (6) ◽  
pp. 3885-3888 ◽  
Author(s):  
P. J. H. Denteneer ◽  
C. G. Van de Walle ◽  
S. T. Pantelides
Keyword(s):  
Crystalline Silicon ◽  
Microscopic Structure

scholarly journals Microscopic structure of the hydrogen-boron complex in crystalline silicon

1989 ◽  
Vol 39 (15) ◽  
pp. 10809-10824 ◽  
Author(s):  
P. J. H. Denteneer ◽  
C. G. Van de Walle ◽  
S. T. Pantelides
Keyword(s):  
Crystalline Silicon ◽  
Microscopic Structure ◽  
Boron Complex

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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