Band offsets and interfacial properties of cubic CdS grown by molecular-beam epitaxy on CdTe(110)

1990 ◽  
Vol 41 (18) ◽  
pp. 12710-12719 ◽  
Author(s):  
David W. Niles ◽  
Hartmut Höchst
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interfacial Properties ◽  
Band Offsets ◽  
Cubic Cds

Band offsets of La2O3 on (0001) GaN grown by reactive molecular-beam epitaxy

2013 ◽  
Vol 102 (16) ◽  
pp. 162903 ◽  
Author(s):  
Jon F. Ihlefeld ◽  
Michael Brumbach ◽  
Stanley Atcitty
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Offsets

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

2007 ◽  
Vol 102 (7) ◽  
pp. 074104 ◽  
Author(s):  
H. S. Craft ◽  
R. Collazo ◽  
M. D. Losego ◽  
S. Mita ◽  
Z. Sitar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Band Offsets ◽  
X Ray

Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxy

1999 ◽  
Vol 201-202 ◽  
pp. 457-460 ◽  
Author(s):  
M Grün ◽  
A Storzum ◽  
M Hetterich ◽  
A Kamilli ◽  
W Send ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chlorine Doping ◽  
Cubic Cds

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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