scholarly journals Chemical trends for deep levels associated with vacancy-impurity complexes in semiconductors

1989 ◽  
Vol 40 (9) ◽  
pp. 6222-6235 ◽  
Author(s):  
Yu-Tang Shen ◽  
Charles W. Myles
Keyword(s):  
Deep Levels ◽  
Chemical Trends

scholarly journals Chemical trends of deep levels in van der Waals semiconductors

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Penghong Ci ◽  
Xuezeng Tian ◽  
Jun Kang ◽  
Anthony Salazar ◽  
Kazutaka Eriguchi ◽  
...  
Keyword(s):  
Deep Level ◽  
Energy Levels ◽  
Van Der Waals ◽  
Deep Levels ◽  
Persistent Photoconductivity ◽  
Sulfur Vacancy ◽  
Native Defects ◽  
Crystal Imperfections ◽  
Dx Center ◽  
Chemical Trends

AbstractProperties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400 K.

scholarly journals Author Correction: Chemical trends of deep levels in van der Waals semiconductors

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Penghong Ci ◽  
Xuezeng Tian ◽  
Jun Kang ◽  
Anthony Salazar ◽  
Kazutaka Eriguchi ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Deep Levels ◽  
Chemical Trends

A Correction to this paper has been published: https://doi.org/10.1038/s41467-020-20151-x

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

Self-compensation and deep levels in Pb1−xSnxS1−ySey crystals

1992 ◽  
Vol 14 (4) ◽  
pp. 398-400 ◽  
Author(s):  
D.M. Zayachuk ◽  
V.I. Garasim ◽  
V.A. Shenderovskii
Keyword(s):  
Deep Levels
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