scholarly journals Excitonic transitions in GaAs-AlxGa1−xAs multiple quantum wells affected by interface roughness

1989 ◽  
Vol 40 (17) ◽  
pp. 11862-11867 ◽  
Author(s):  
P. Zhou ◽  
H. X. Jiang ◽  
R. Bannwart ◽  
S. A. Solin ◽  
G. Bai
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitonic Transitions

Ultrafast differential transmission spectroscopy of excitonic transitions in InGaN/GaN multiple quantum wells

2003 ◽  
Vol 93 (8) ◽  
pp. 4933-4935 ◽  
Author(s):  
Fei Chen ◽  
M. C. Cheung ◽  
Paul M. Sweeney ◽  
W. D. Kirkey ◽  
M. Furis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Transmission Spectroscopy ◽  
Differential Transmission ◽  
Excitonic Transitions

Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells

2008 ◽  
Vol 25 (11) ◽  
pp. 4143-4146 ◽  
Author(s):  
Zhao De-Gang ◽  
Jiang De-Sheng ◽  
Zhu Jian-Jun ◽  
Liu Zong-Shun ◽  
Zhang Shu-Ming ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Wells ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electroluminescence Intensity

Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells

2004 ◽  
Vol 37 (3) ◽  
pp. 391-394 ◽  
Author(s):  
J. C. Zhang ◽  
J. F. Wang ◽  
Y. T. Wang ◽  
M. Wu ◽  
J. P. Liu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Structural Defects ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Edge Dislocations

InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ω scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as non-radiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.

Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K

2018 ◽  
Vol 123 (20) ◽  
pp. 205705 ◽  
Author(s):  
Hideaki Murotani ◽  
Yuya Hayakawa ◽  
Kazuki Ikeda ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitonic Transitions

INTERFACIAL PROPERTY OF THE PSEUDOMORPHIC InGaAs/AlGaAs MULTIPLE QUANTUM WELLS

2001 ◽  
Vol 08 (05) ◽  
pp. 537-540
Author(s):  
D. H. ZHANG
Keyword(s):  
Quantum Wells ◽  
Energy Levels ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Interfacial Property ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
P Type

The effects of Be doping in the wells of the p-type pseudomorphic InGaAs/AlGaAs multiple quantum wells were characterized using photoluminescence and X-ray diffraction techniques. It is found that high doping in the wells causes shift of energy levels and deteriorates the well–barrier interfaces of the quantum well structures. The shift of the energy levels is mainly due to the band gap shrinkage while the interface roughness can be explained by interstitial doping.

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