Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells

1998 ◽  
Vol 73 (12) ◽  
pp. 1724-1726 ◽  
Author(s):  
K. C. Zeng ◽  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Alloy Disorder

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells

2008 ◽  
Vol 25 (11) ◽  
pp. 4143-4146 ◽  
Author(s):  
Zhao De-Gang ◽  
Jiang De-Sheng ◽  
Zhu Jian-Jun ◽  
Liu Zong-Shun ◽  
Zhang Shu-Ming ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Wells ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electroluminescence Intensity

Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells

2004 ◽  
Vol 37 (3) ◽  
pp. 391-394 ◽  
Author(s):  
J. C. Zhang ◽  
J. F. Wang ◽  
Y. T. Wang ◽  
M. Wu ◽  
J. P. Liu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Structural Defects ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Edge Dislocations

InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ω scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as non-radiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1998 ◽  
Vol 537 ◽  
Author(s):  
H. S. Kim ◽  
Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

AbstractPiezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

scholarly journals Excitonic transitions in GaAs-AlxGa1−xAs multiple quantum wells affected by interface roughness

1989 ◽  
Vol 40 (17) ◽  
pp. 11862-11867 ◽  
Author(s):  
P. Zhou ◽  
H. X. Jiang ◽  
R. Bannwart ◽  
S. A. Solin ◽  
G. Bai
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitonic Transitions

INTERFACIAL PROPERTY OF THE PSEUDOMORPHIC InGaAs/AlGaAs MULTIPLE QUANTUM WELLS

2001 ◽  
Vol 08 (05) ◽  
pp. 537-540
Author(s):  
D. H. ZHANG
Keyword(s):  
Quantum Wells ◽  
Energy Levels ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Interfacial Property ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
P Type

The effects of Be doping in the wells of the p-type pseudomorphic InGaAs/AlGaAs multiple quantum wells were characterized using photoluminescence and X-ray diffraction techniques. It is found that high doping in the wells causes shift of energy levels and deteriorates the well–barrier interfaces of the quantum well structures. The shift of the energy levels is mainly due to the band gap shrinkage while the interface roughness can be explained by interstitial doping.

scholarly journals Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1999 ◽  
Vol 4 (S1) ◽  
pp. 130-135
Author(s):  
H. S. Kim ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

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