Planar channeling in superlattices. II. Catastrophic dechanneling

1988 ◽  
Vol 38 (16) ◽  
pp. 11086-11097 ◽  
Author(s):  
S. T. Picraux ◽  
R. M. Biefeld ◽  
W. R. Allen ◽  
W. K. Chu ◽  
J. A. Ellison
Keyword(s):  
Planar Channeling

Planar channeling in GaAs/InxGa1−xAs/GaAs strained‐layer structures

1989 ◽  
Vol 65 (4) ◽  
pp. 1510-1515 ◽  
Author(s):  
J. L. E. Stevens ◽  
B. J. Robinson ◽  
J. A. Davies ◽  
D. A. Thompson ◽  
T. E. Jackman
Keyword(s):  
Planar Channeling ◽  
Strained Layer ◽  
Layer Structures

Planar channeling of helium ions along (100), (110) and (111) MgO

1979 ◽  
Vol 69 (5) ◽  
pp. 356-359 ◽  
Author(s):  
S.D. Mukherjee ◽  
D.W. Palmer
Keyword(s):  
Planar Channeling ◽  
Helium Ions

Multiple scattering of channeling ions in crystals-II. Planar channeling

1973 ◽  
Vol 20 (1-2) ◽  
pp. 95-109 ◽  
Author(s):  
V. V. Beloshitsky ◽  
M. A. Kumakhov ◽  
V. A. Muralev
Keyword(s):  
Multiple Scattering ◽  
Planar Channeling

A structure modeling of metal-silicide layers by using axial and planar channeling techniques

1978 ◽  
Vol 149 (1-3) ◽  
pp. 417-420 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Masao Nagatomo ◽  
Seijiro Furukawa
Keyword(s):  
Structure Modeling ◽  
Metal Silicide ◽  
Planar Channeling

Investigation of Quantum States of Fast Electrons under Planar Channeling in Silicon Crystals

1987 ◽  
Vol 142 (1) ◽  
pp. 49-65 ◽  
Author(s):  
V. I. Gridnev ◽  
V. V. Kaplin ◽  
V. G. Khlabutin ◽  
E. I. Rozum ◽  
S. A. Vorobiev
Keyword(s):  
Quantum States ◽  
Planar Channeling ◽  
Fast Electrons ◽  
Silicon Crystals

New module for channeling radiation simulation in Geant4

2021 ◽  
Vol 16 (12) ◽  
pp. P12042
Author(s):  
A.A. Savchenko ◽  
W. Wagner
Keyword(s):  
Experimental Data ◽  
Single Crystals ◽  
Dipole Approximation ◽  
Relativistic Electrons ◽  
Planar Channeling ◽  
Classical Approach ◽  
Electrons And Positrons ◽  
Simulation Results ◽  
Channeling Radiation ◽  
Good Agreement

Abstract We present a new C++ module for simulation of channeling radiation to be implemented in Geant4 as a discrete physical process. The module allows simulation of channeling radiation from relativistic electrons and positrons with energies above 100 MeV for various types of single crystals. In this paper, we simulate planar channeling radiation applying the classical approach in the dipole approximation as a first attempt not yet considering other contributory processes. Simulation results are proved to be in a rather good agreement with experimental data.

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