Investigation of Quantum States of Fast Electrons under Planar Channeling in Silicon Crystals

1987 ◽  
Vol 142 (1) ◽  
pp. 49-65 ◽  
Author(s):  
V. I. Gridnev ◽  
V. V. Kaplin ◽  
V. G. Khlabutin ◽  
E. I. Rozum ◽  
S. A. Vorobiev
Keyword(s):  
Quantum States ◽  
Planar Channeling ◽  
Fast Electrons ◽  
Silicon Crystals

Orientational Population of Quantum States for Fast Electrons in Planar Channeling

1981 ◽  
Vol 103 (1) ◽  
pp. 81-87 ◽  
Author(s):  
S. V. Plotnikov ◽  
D. E. Popov ◽  
E. I. Rozum ◽  
O. G. Kostareva ◽  
S. A. Vorobiev
Keyword(s):  
Quantum States ◽  
Planar Channeling ◽  
Fast Electrons

Angular Distributions of Fast Electrons at Planar Channeling in Silicon Crystals

1984 ◽  
Vol 126 (2) ◽  
pp. 565-574 ◽  
Author(s):  
V. V. Kaplin ◽  
S. B. Nurmagambetov ◽  
V. I. Gridnev ◽  
E. I. Rozum ◽  
S. Pak ◽  
...  
Keyword(s):  
Angular Distributions ◽  
Planar Channeling ◽  
Fast Electrons ◽  
Silicon Crystals

scholarly journals Оптические свойства и механизм образования вакансионно-кислородных комплексов V-=SUB=-2-=/SUB=-O-=SUB=-2-=/SUB=- и V-=SUB=-3-=/SUB=-O-=SUB=-2-=/SUB=- в облученных кристаллах кремния

2018 ◽  
Vol 52 (9) ◽  
pp. 973
Author(s):  
Е.А. Толкачева ◽  
В.П. Маркевич ◽  
Л.И. Мурин
Keyword(s):  
Infrared Absorption ◽  
Vibrational Modes ◽  
Fourier Spectroscopy ◽  
Absorption Bands ◽  
Fast Electrons ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Local Vibrational Modes ◽  
Oxygen Complexes

AbstractThe processes of the formation and annealing of V_ n O_ m ( n , m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm^–1 as being related to local vibrational modes of V_2O_2 and V_3O_2 complexes, respectively.

Bound States of Fast Electrons in Planar Channeling

1976 ◽  
Vol 76 (2) ◽  
pp. 779-786 ◽  
Author(s):  
V. V. Kaplin ◽  
D. E. Popov ◽  
S. A. Vorobev
Keyword(s):  
Bound States ◽  
Planar Channeling ◽  
Fast Electrons

Formation of oxygen-containing centers in irradiated silicon crystals during annealing in 450 – 700 °С temperature range

2020 ◽  
pp. 22-29
Author(s):  
E. A. Talkachova ◽  
◽  
L. I. Murin ◽  
I. F. Medvedeva ◽  
F. P. Korshunov ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Heat Treatments ◽  
Ir Absorption ◽  
Absorption Bands ◽  
Fast Electrons ◽  
Temperature Range ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Radiation Induced ◽  
Induced Defects

The processes associated with transformations of oxygen-related radiation-induced defects in Czochralski-grown silicon crystals irradiated with fast electrons or neutrons and subjected to heat-treatments in the temperature range 450 – 700 °C have been studied by means of IR absorption spectroscopy. It is found that upon disappearance of the VO3 and VO4 defects the new vacancy-oxygen-related complexes, which give rise to a number of vibrational absorption bands in the 980 – 1115 cm–1 vawenumber range, are formed. It is argued that these complexes are VOm (m ≥ 5) defects which serve as radiation-induced nucleation centers of enhanced oxygen precipitation.

Design of Sensitive Photographic Materials for the High-Voltage Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 156-157
Author(s):  
Murray Vernon King ◽  
Donald F. Parsons
Keyword(s):  
Electron Microscope ◽  
Radiation Damage ◽  
High Voltage ◽  
Radiation Sensitivity ◽  
Fast Electrons ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Biological Studies ◽  
Low Sensitivity

Effective application of the high-voltage electron microscope to a wide variety of biological studies has been restricted by the radiation sensitivity of biological systems. The problem of radiation damage has been recognized as a serious factor influencing the amount of information attainable from biological specimens in electron microscopy at conventional voltages around 100 kV. The problem proves to be even more severe at higher voltages around 1 MV. In this range, the problem is the relatively low sensitivity of the existing recording media, which entails inordinately long exposures that give rise to severe radiation damage. This low sensitivity arises from the small linear energy transfer for fast electrons. Few developable grains are created in the emulsion per electron, while most of the energy of the electrons is wasted in the film base.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Geometry of Quantum States

2006 ◽  
Author(s):  
Ingemar Bengtsson ◽  
Karol Zyczkowski
Keyword(s):  
Quantum States
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