Planar channeling in GaAs/InxGa1−xAs/GaAs strained‐layer structures

1989 ◽  
Vol 65 (4) ◽  
pp. 1510-1515 ◽  
Author(s):  
J. L. E. Stevens ◽  
B. J. Robinson ◽  
J. A. Davies ◽  
D. A. Thompson ◽  
T. E. Jackman
Keyword(s):  
Planar Channeling ◽  
Strained Layer ◽  
Layer Structures

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

Direct measurement of local lattice distortions in strained layer structures by HREM

1993 ◽  
Vol 49 (1-4) ◽  
pp. 273-285 ◽  
Author(s):  
R. Bierwolf ◽  
M. Hohenstein ◽  
F. Phillipp ◽  
O. Brandt ◽  
G.E. Crook ◽  
...  
Keyword(s):  
Direct Measurement ◽  
Strained Layer ◽  
Layer Structures ◽  
Local Lattice ◽  
Lattice Distortions

Stability and metastability of semiconductor strained-layer structures

1988 ◽  
Vol 4 (4-5) ◽  
pp. 417-422 ◽  
Author(s):  
Brian W. Dodson ◽  
Jeffrey Y. Tsao ◽  
Paul A. Taylor
Keyword(s):  
Strained Layer ◽  
Layer Structures

Dislocation interactions in strained-layer structures grown on GaAs and Si substrates

1988 ◽  
Vol 93 (1-4) ◽  
pp. 449-458 ◽  
Author(s):  
N. Hamaguchi ◽  
T.P. Humphreys ◽  
D.J. Moore ◽  
C.A. Parker ◽  
S.M. Bedair ◽  
...  
Keyword(s):  
Strained Layer ◽  
Si Substrates ◽  
Layer Structures ◽  
Dislocation Interactions

Stability and Metastability in Semiconductor Strained-Layer Structures

1987 ◽  
Vol 103 ◽  
Author(s):  
Brian W. Dodson ◽  
I. J. Fritz ◽  
S. Thomas Picraux ◽  
Jeffrey Y. Tsao
Keyword(s):  
Experimental Data ◽  
Plastic Deformation ◽  
Structural Relaxation ◽  
Strain Relaxation ◽  
Dislocation Dynamics ◽  
Strained Layer ◽  
Stability Properties ◽  
Mismatch Strain ◽  
Layer Structures ◽  
Standard Models

ABSTRACTThe physics governing stability properties and relaxation of mismatch strain in semiconductor strained-layer structures is reviewed. Experimental data on stability and rates of strain relaxation are examined. We conclude that essentially all observations on structural relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.

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