Fermi surface, effective masses, and energy bands of HfTe_{5} as derived from the Shubnikov–de Haas effect

1987 ◽  
Vol 35 (3) ◽  
pp. 1223-1229 ◽  
Author(s):  
G. Kamm ◽  
D. Gillespie ◽  
A. Ehrlich ◽  
D. Peebles ◽  
F. Levy
Keyword(s):  
Fermi Surface ◽  
Energy Bands ◽  
Effective Masses ◽  
Haas Effect

Fermi surface, effective masses, and Dingle temperatures ofZrTe5as derived from the Shubnikov–de Haas effect

1985 ◽  
Vol 31 (12) ◽  
pp. 7617-7623 ◽  
Author(s):  
G. N. Kamm ◽  
D. J. Gillespie ◽  
A. C. Ehrlich ◽  
T. J. Wieting ◽  
F. Levy
Keyword(s):  
Fermi Surface ◽  
Effective Masses ◽  
Haas Effect

Erratum: Fermi surface, effective masses, and Dingle temperatures of ZrTe5as derived from the Shubnikov-de Haas effect

1986 ◽  
Vol 33 (12) ◽  
pp. 8791-8791
Author(s):  
G. N. Kamm ◽  
D. J. Gillespie ◽  
A. C. Ehrlich ◽  
T. J. Wieting ◽  
F. Levy
Keyword(s):  
Fermi Surface ◽  
Effective Masses ◽  
Haas Effect

Electronic Structure and Transport Properties of CoSb3: A Narrow Band-Gap Semiconductor

1998 ◽  
Vol 545 ◽  
Author(s):  
J. O. Sofo ◽  
G. D. Mahan
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Fermi Surface ◽  
Band Gap ◽  
Narrow Band ◽  
Transport Coefficients ◽  
Electronic States ◽  
Energy Bands ◽  
Effective Masses ◽  
Hall Effect Measurements

AbstractWe report calculations which show that the band structure of CoSb3 is typical of a narrow band-gap semiconductor. The gap is strongly dependent on the relative position of the Sb atoms inside the unit cell. We obtain a band gap of 0.22 eV after minimization of these position. This value is more than four times larger than the result of a previous calculation which reported that the energy bands near the Fermi surface are unusual. The electronic states close to the Fermi level are properly described by a two-band Kane Model. The calculated effective masses and band gap are in excellent agreement with Shubnikov de Haas and Hall effect measurements. Recent measurements of the transport coefficients of this compound can be understood assuming it is a narrow band gap semiconductor, in agreement with our results.

Self-consistent energy bands and Fermi surface of YZn

1977 ◽  
Vol 7 (7) ◽  
pp. 1229-1244 ◽  
Author(s):  
A Hasegawa ◽  
A Yanase
Keyword(s):  
Fermi Surface ◽  
Energy Bands ◽  
Self Consistent

Absence of magnetic field dependence of the cyclotron effective masses of electrons on the Fermi surface of Pd

1984 ◽  
Vol 30 (10) ◽  
pp. 5637-5645 ◽  
Author(s):  
W. Joss ◽  
L. N. Hall ◽  
G. W. Crabtree ◽  
J. J. Vuillemin
Keyword(s):  
Magnetic Field ◽  
Fermi Surface ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Effective Masses

Fermi surface and effective masses for the heavy-electron superconductors UPt3

1988 ◽  
Vol 68 (2) ◽  
pp. 245-249 ◽  
Author(s):  
M.R. Norman ◽  
R.C. Albers ◽  
A.M. Boring ◽  
N.E. Christensen
Keyword(s):  
Fermi Surface ◽  
Effective Masses ◽  
Heavy Electron ◽  
Electron Superconductors

Effective masses in Sn‐doped Ga1−xAlxAs (x<0.33) determined by the Shubnikov–de Haas effect

1985 ◽  
Vol 58 (9) ◽  
pp. 3481-3484 ◽  
Author(s):  
B. El Jani ◽  
P. Gibart ◽  
J. C. Portal ◽  
R. L. Aulombard
Keyword(s):  
Effective Masses ◽  
Haas Effect

The Shubnikov – de Haas effect in dilute lead-in-bismuth alloys

1968 ◽  
Vol 46 (21) ◽  
pp. 2413-2423 ◽  
Author(s):  
On-Ting Woo ◽  
R. J. Balcombe
Keyword(s):  
Band Structure ◽  
Fermi Surface ◽  
Carrier Concentration ◽  
Fermi Energy ◽  
Dilute Alloys ◽  
Haas Effect ◽  
Effect Of Alloying

The differential Shubnikov – de Haas effect has been studied in samples of bismuth containing up to 50 parts per million of lead. The results indicate that the only effect of alloying on the band structure of bismuth is to shift the Fermi energy; the sizes of the various pieces of the Fermi surface are changed, but their shapes are not distorted. The ratio of the change in net carrier concentration to the concentration of lead atoms is found to be only 0.4, which is anomalously low, compared with values of about 1.0 found for dilute alloys of other metals in bismuth.

Hydrostatic pressure and uniaxial stress derivatives of the Fermi surface of rhenium

1983 ◽  
Vol 61 (10) ◽  
pp. 1428-1433 ◽  
Author(s):  
J. R. Anderson ◽  
F. W. Holroyd ◽  
J. M. Perz ◽  
J. E. Schirber ◽  
I. M. Templeton
Keyword(s):  
Transition Temperature ◽  
Hydrostatic Pressure ◽  
Fermi Surface ◽  
Cross Sections ◽  
Solid Helium ◽  
Uniaxial Stress ◽  
Superconducting Transition ◽  
Cross Sectional ◽  
Effective Masses ◽  
Derivatives Of

Derivatives with respect to hydrostatic pressure of extremal cross-sectional areas normal to [Formula: see text] of all closed sheets of the Fermi surface of rhenium have been determined by both fluid–helium and solid–helium phase shift techniques. Precise values of de Haas–van Alphen frequencies and effective masses have also been measured for these cross sections. In addition, uniaxial stress derivatives of the zone seven cross sections have been deduced from quantum oseillations in magnetostriction and torque. Previously observed anomalies in the pressure dependence of the superconducting transition temperature are interpreted in terms of the present results.

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