The Shubnikov – de Haas effect in dilute lead-in-bismuth alloys

1968 ◽  
Vol 46 (21) ◽  
pp. 2413-2423 ◽  
Author(s):  
On-Ting Woo ◽  
R. J. Balcombe
Keyword(s):  
Band Structure ◽  
Fermi Surface ◽  
Carrier Concentration ◽  
Fermi Energy ◽  
Dilute Alloys ◽  
Haas Effect ◽  
Effect Of Alloying

The differential Shubnikov – de Haas effect has been studied in samples of bismuth containing up to 50 parts per million of lead. The results indicate that the only effect of alloying on the band structure of bismuth is to shift the Fermi energy; the sizes of the various pieces of the Fermi surface are changed, but their shapes are not distorted. The ratio of the change in net carrier concentration to the concentration of lead atoms is found to be only 0.4, which is anomalously low, compared with values of about 1.0 found for dilute alloys of other metals in bismuth.

scholarly journals Modelling of Graphene Nanoribbon Fermi Energy

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Zaharah Johari ◽  
Mohammad Taghi Ahmadi ◽  
Desmond Chang Yih Chek ◽  
N. Aziziah Amin ◽  
Razali Ismail
Keyword(s):  
Band Structure ◽  
Carrier Concentration ◽  
Fermi Energy ◽  
Minimum Energy ◽  
Graphene Nanoribbon ◽  
Promising Alternative ◽  
Band Energy ◽  
One Dimensional ◽  
Statistic Study ◽  
Degenerate Regime

Graphene nanoribbon (GNR) is a promising alternative to carbon nanotube (CNT) to overcome the chirality challenge as a nanoscale device channel. Due to the one-dimensional behavior of plane GNR, the carrier statistic study is attractive. Research works have been done on carrier statistic study of GNR especially in the parabolic part of the band structure using Boltzmann approximation (nondegenerate regime). Based on the quantum confinement effect, we have improved the fundamental study in degenerate regime for both the parabolic and nonparabolic parts of GNR band energy. Our results demonstrate that the band energy of GNR near to the minimum band energy is parabolic. In this part of the band structure, the Fermi-Dirac integrals are sufficient for the carrier concentration study. The Fermi energy showed the temperature-dependent behavior similar to any other one-dimensional device in nondegenerate regime. However in the degenerate regime, the normalized Fermi energy with respect to the band edge is a function of carrier concentration. The numerical solution of Fermi-Dirac integrals for nonparabolic region, which is away from the minimum energy band structure of GNR, is also presented.

scholarly journals Electronic Structure of the Cubic Compounds ReGa3(Re = Er, Tm, Yb, and Lu)

2011 ◽  
Vol 2011 ◽  
pp. 1-14 ◽  
Author(s):  
Helmut Bross
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Fermi Surface ◽  
Fermi Energy ◽  
Dielectric Response ◽  
Nuclear Charge ◽  
Dielectric Response Function ◽  
The Core ◽  
Structure Scheme ◽  
Valence Bands

The electronic structure of ErGa3and its isostructural compounds with Tm, Yb, and Lu are investigated with a highly accurate band structure scheme in LDA and GGA and warped muffin-tin approximation. In contrast to other investigations, the 4f electrons of the constituent Re are also treated as part of the valence bands. The position of the corresponding 4f bands relative to the Fermi energy strongly depends on the nuclear charge of Re. In Lu, they lie almost by 0.5 Ryd below and are extremely narrow. In Er, both in LDA and GGA, the 4f bands are found to be very close to the Fermi level . Assuming most of the 4f electrons to be part of the core removes the disagreement almost completely but produces a Fermi surface with a topology markedly different from that proposed in previous investigations. The intersections of the Fermi surface with planes are strongly varying within the Brillouin zone, they do not well match with the sparse experimental results. Investigations using the scheme as well as investigations of the dielectric response function are sketched.

scholarly journals Fermi surface of the skutterudite CoSb3 : Quantum oscillations and band-structure calculations

2021 ◽  
Vol 103 (8) ◽  
Author(s):  
M. Naumann ◽  
P. Mokhtari ◽  
Z. Medvecka ◽  
F. Arnold ◽  
M. Pillaca ◽  
...  
Keyword(s):  
Band Structure ◽  
Fermi Surface ◽  
Quantum Oscillations ◽  
Band Structure Calculations ◽  
Structure Calculations

LCAO analysis of the electron band structure and Fermi surface of cubic superconducting perovskites

1997 ◽  
Vol 21 (3) ◽  
pp. 471-475 ◽  
Author(s):  
Todor M. Mishonov ◽  
Ivan N. Gentchev ◽  
Radostina K. Koleva ◽  
Evgeni S. Penev
Keyword(s):  
Band Structure ◽  
Fermi Surface ◽  
Electron Band ◽  
Electron Band Structure

Experimental band structure and Fermi surface of a two-dimensional Er silicide on Si(111)

1992 ◽  
Vol 82 (4) ◽  
pp. 235-238 ◽  
Author(s):  
P. Wetzel ◽  
C. Pirri ◽  
P. Paki ◽  
J.C. Peruchetti ◽  
D. Bolmont ◽  
...  
Keyword(s):  
Band Structure ◽  
Fermi Surface ◽  
Two Dimensional

Band Structure and Fermi Surface of White Tin

1966 ◽  
Vol 149 (2) ◽  
pp. 504-518 ◽  
Author(s):  
Gideon Weisz
Keyword(s):  
Band Structure ◽  
Fermi Surface

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

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