Electronic Structure and Transport Properties of CoSb3: A Narrow Band-Gap Semiconductor

1998 ◽  
Vol 545 ◽  
Author(s):  
J. O. Sofo ◽  
G. D. Mahan
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Fermi Surface ◽  
Band Gap ◽  
Narrow Band ◽  
Transport Coefficients ◽  
Electronic States ◽  
Energy Bands ◽  
Effective Masses ◽  
Hall Effect Measurements

AbstractWe report calculations which show that the band structure of CoSb3 is typical of a narrow band-gap semiconductor. The gap is strongly dependent on the relative position of the Sb atoms inside the unit cell. We obtain a band gap of 0.22 eV after minimization of these position. This value is more than four times larger than the result of a previous calculation which reported that the energy bands near the Fermi surface are unusual. The electronic states close to the Fermi level are properly described by a two-band Kane Model. The calculated effective masses and band gap are in excellent agreement with Shubnikov de Haas and Hall effect measurements. Recent measurements of the transport coefficients of this compound can be understood assuming it is a narrow band gap semiconductor, in agreement with our results.

Elementary energy bands in the band structure of the narrow-band-gap semiconductor CdSb

2004 ◽  
Vol 70 (23) ◽  
Author(s):  
D. M. Bercha ◽  
I. V. Slipukhina ◽  
M. Sznajder ◽  
K. Z. Rushchanskii
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Narrow Band ◽  
Energy Bands

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

Efficient Discovery of Optimal N-Layered TMDC Hetero-Structures

MRS Advances ◽  
2018 ◽  
Vol 3 (6-7) ◽  
pp. 397-402 ◽  
Author(s):  
Lindsay Bassman ◽  
Pankaj Rajak ◽  
Rajiv K. Kalia ◽  
Aiichiro Nakano ◽  
Fei Sha ◽  
...  
Keyword(s):  
Band Structure ◽  
Physical Properties ◽  
Band Gap ◽  
Electronic Band Structure ◽  
Transport Coefficients ◽  
Optimization Technique ◽  
Bayesian Optimization ◽  
Material Structure ◽  
Electronic Band ◽  
Structure Calculations

ABSTRACTVertical hetero-structures made from stacked monolayers of transition metal dichalcogenides (TMDC) are promising candidates for next-generation optoelectronic and thermoelectric devices. Identification of optimal layered materials for these applications requires the calculation of several physical properties, including electronic band structure and thermal transport coefficients. However, exhaustive screening of the material structure space using ab initio calculations is currently outside the bounds of existing computational resources. Furthermore, the functional form of how the physical properties relate to the structure is unknown, making gradient-based optimization unsuitable. Here, we present a model based on the Bayesian optimization technique to optimize layered TMDC hetero-structures, performing a minimal number of structure calculations. We use the electronic band gap and thermoelectric figure of merit as representative physical properties for optimization. The electronic band structure calculations were performed within the Materials Project framework, while thermoelectric properties were computed with BoltzTraP. With high probability, the Bayesian optimization process is able to discover the optimal hetero-structure after evaluation of only ∼20% of all possible 3-layered structures. In addition, we have used a Gaussian regression model to predict not only the band gap but also the valence band maximum and conduction band minimum energies as a function of the momentum.

Electronic Structure, Effective Masses and Optical Properties of Monoclinic HfO2 from First-Principles Calculations

2011 ◽  
Vol 216 ◽  
pp. 341-344 ◽  
Author(s):  
Qi Jun Liu ◽  
Zheng Tang Liu ◽  
Li Ping Feng
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Band Structure ◽  
First Principles ◽  
Density Functional ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Effective Masses ◽  
Indirect Band Gap ◽  
Calculated Equilibrium

Electronic structure, effective masses and optical properties of monoclinic HfO2were studied using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT). The calculated equilibrium lattice parameters are in agreement with the previous works. From the band structure, the effective masses and optical properties are obtained. The calculated band structure shows that monoclinic HfO2has indirect band gap and all of the effective masses of electrons and holes are less than that of a free electron. The peaks position distributions of imaginary parts of the complex dielectric function have been explained according to the theory of crystal-field and molecular-orbital bonding.

Atomic and Electronic Structure of LaAlO3 and LaAlO3:Mg from First-Principles Calculations

2009 ◽  
Vol 79-82 ◽  
pp. 1257-1260
Author(s):  
Li Guan ◽  
Li Tao Jin ◽  
Wei Zhang ◽  
Qiang Li ◽  
Jian Xin Guo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Density Functional ◽  
Lattice Structure ◽  
Cell Structure ◽  
Functional Theory ◽  
Super Cell ◽  
Direct Band ◽  
Experimental Values

In the present paper, the lattice structure, band structure and density of state of LaAlO3 and LaAlO3:Mg are calculated by first-principle method based on density functional theory. Firstly, we select the different cutoff energy and k-point grid in the calculations, and obtain the most stable geometry structure of single crystal LaAlO3. The calculated lattice parameters are a=b=5.441 Å, c=13.266 Å, which matches with experimental values. To deeply understand the electronic structure of LaAlO3, a 2×1×1 super-cell structure is established and the doping concentration of Mg at Al sites is 25%. From the band structure and density of states, it can be seen that LaAlO3 has a direct band gap Eg=3.6 eV. However, LaAlO3:Mg has a larger band gap Eg=3.89 eV and the Fermi level enters into the valence band, which indicates the holes are introduced. The calculated results show that the conductivity of LaAlO3:Mg is better than pure LaAlO3, which is in good agreement with experimental results.

scholarly journals Soft X-ray spectroscopic studies of the electronic structure of M:BiVO4(M = Mo, W) single crystals

2015 ◽  
Vol 3 (47) ◽  
pp. 23743-23753 ◽  
Author(s):  
V. Jovic ◽  
J. Laverock ◽  
A. J. E. Rettie ◽  
J.-S. Zhou ◽  
C. B. Mullins ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Single Crystals ◽  
Electronic States ◽  
Spectroscopic Studies ◽  
X Ray

X-ray spectroscopy reveals the presence of inter-band gap electronic states of egsymmetry in M:BiVO4(M = Mo, W) PEC anodes.

Low Energy K-Dependent Electronic Structure of the Layered Magnetoresistive Oxide La1.2Sr1.8Mn2O7

1997 ◽  
Vol 494 ◽  
Author(s):  
T. Saitoh ◽  
D. S. Dessau ◽  
C.-H. Park ◽  
Z.-X. Shen ◽  
P. Villella ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Current System ◽  
Coupling Model ◽  
Local Spin Density Approximation ◽  
Energy Bands ◽  
Strong Electron ◽  
Colossal Magnetoresistive ◽  
Band Structure Calculations ◽  
Structure Calculations

ABSTRACTWe have studied the fc-dependent electronic structure of the layered colossal magnetoresistive manganite La1.2Sr1.8Mn2O7 using high-resolution angle-resolved photoemission spectroscopy. We found dispersive energy bands as a function of the crystal momentum k near the Fermi level (EF). We have also performed local spin density approximation (LSDA)+U band-structure calculations on the current system. The overall experimental dispersion relation is basically in agreement with the band-structure calculations yet close to EF there is a significant deviation from the predicted dispersions. Instead of clear Fermi-surface (FS) crossings, we observe a depression of the features as the FS is approached as if there is a “pseudo” gap in the excitation spectrum. The pseudogap continuously opens with temperature and does not show further significant opening above Tc, corresponding to the metal-insulator transition. Those unusual aspects of the spectra has been discussed from the viewpoint of the strong electron-lattice coupling model.

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