Observation by resonant tunneling of high-energy states in GaAs-Ga1−xAlxAs quantum wells

1986 ◽  
Vol 33 (10) ◽  
pp. 7368-7370 ◽  
Author(s):  
E. E. Mendez ◽  
E. Calleja ◽  
C. E. T. Gonçalves da Silva ◽  
L. L. Chang ◽  
W. I. Wang
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
High Energy ◽  
Energy States

scholarly journals Measurement of the structure of potential cluster bands and absolute branching ratios of high-energy states in 18O*

2020 ◽  
Vol 1643 ◽  
pp. 012155
Author(s):  
S. Pirrie ◽  
C. Wheldon ◽  
Tz. Kokalova ◽  
J. Bishop ◽  
R. Hertenberger ◽  
...  
Keyword(s):  
High Energy ◽  
Branching Ratios ◽  
Energy States

Luminescence studies of resonant tunneling in a triple barrier structure with strongly coupled quantum wells

1994 ◽  
Vol 37 (4-6) ◽  
pp. 721-724 ◽  
Author(s):  
T.S. Turner ◽  
P.M. Martin ◽  
L. Eaves ◽  
H.B. Evans ◽  
P.A. Harrison ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Barrier Structure ◽  
Coupled Quantum Wells ◽  
Strongly Coupled

Coherent model for resonant tunneling of electrons in double quantum wells under electric fields

1994 ◽  
Vol 49 (8) ◽  
pp. 5434-5437 ◽  
Author(s):  
Shi-rong Jin ◽  
Zhong-ying Xu ◽  
Jin-sheng Luo
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Resonant Tunneling ◽  
Double Quantum

Growth Evolution of (Zn,Cd)Se Quantum Dots Deduced from Spatially Resolved Structural and Optical Characterization

1999 ◽  
Vol 571 ◽  
Author(s):  
K. Leonard ◽  
D. Hommel ◽  
A. Stockmann ◽  
H. Selke ◽  
J. Seufert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Direction ◽  
Growth Mode ◽  
Gradual Transition ◽  
Mode Transition ◽  
Spatially Resolved ◽  
Composition Fluctuations

ABSTRACTThe growth mode of CdSe layers grown by migration enhanced epitaxy between ZnSe barriers has been investigated. In situ reflection high-energy electron diffraction shows a gradual transition to a three-dimensional growth mode which, however, is not accompanied by a change of the surface lattice constant. High-resolution transmission electron micrographs reveal a strong Cd diffusion, leading to ternary ZnCdSe quantum wells. Furthermore. composition fluctuations perpendicular to the growth direction on a nanometer scale are found already prior to the beginning of the growth mode transition. In the case of heterostructures containing a CdSe layer that has undergone the growth mode transition, micrographs show Cd-rich quantum dots with diameters of around 8 nm and heights of around 1.5 nm within a ternary quantum well. By spatially resolved photoluminescence the emission from single quantum dots could be observed. The polarization dependence of the emission from single dots indicates an asymmetric shape of the dots with certain preferential orientations along the [110] and [110] directions.

Disorder effects on resonant tunneling in double-barrier quantum wells

1988 ◽  
Vol 38 (15) ◽  
pp. 10718-10723 ◽  
Author(s):  
P. A. Schulz ◽  
C. E. T. Gonçalves da Silva
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Disorder Effects

scholarly journals Upconversion emissions from high-energy states of Eu^3+ sensitized by Yb^3+ and Ho^3+ in β-NaYF_4 microcrystals under 980 nm excitation

2011 ◽  
Vol 19 (25) ◽  
pp. 25471 ◽  
Author(s):  
Lili Wang ◽  
Zhenyu Liu ◽  
Zhe Chen ◽  
Dan Zhao ◽  
Guanshi Qin ◽  
...  
Keyword(s):  
High Energy ◽  
Energy States ◽  
Upconversion Emissions

scholarly journals Negative energy states in the Reissner–Nordström metric

2021 ◽  
pp. 2150120
Author(s):  
O. B. Zaslavskii
Keyword(s):  
Turning Point ◽  
High Energy ◽  
Negative Energy ◽  
Infinite Chain ◽  
White Hole ◽  
Negative Energy States ◽  
Energy Formula ◽  
High Energy Collisions ◽  
Energy States

We consider electrogeodesics on which the energy [Formula: see text] in the Reissner–Nordström metric. It is shown that outside the horizon there is exactly one turning point inside the ergoregion for such particles. This entails that such a particle passes through an infinite chain of black–white hole regions or terminates in the singularity. These properties are relevant for two scenarios of high energy collisions in which the presence of white holes is essential.

THE PAULI PRINCIPLE AND QUANTUM TRANSPORT

1994 ◽  
Vol 08 (21n22) ◽  
pp. 1377-1385 ◽  
Author(s):  
S.A. GURVITZ ◽  
H.J. LIPKIN ◽  
Ya. S. PRAGER
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Fock Space ◽  
Pauli Principle ◽  
Semiconductor Heterostructures ◽  
Rate Equations ◽  
Semiconductor Quantum Wells ◽  
Occupation Numbers ◽  
The One ◽  
Space Wave

A new method using Fock space wave functions is proposed for studying resonant tunneling in semiconductor quantum wells. The use of binary occupation numbers as dynamical variables, rather than properties of individual electrons, manifestly takes account of electron statistics, which enables investigation of the influence of the Pauli principle on resonant tunneling in the presence of inelastic scattering. Applied to the evaluation of the resonant current in semiconductor heterostructures, our approach predicts considerable deviations from the one-electron and rate equations pictures.

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