Temperature and donor concentration dependence of the conduction electron Lande g-factor in silicon

2013 ◽  
Author(s):  
Anton A. Konakov ◽  
Alexander A. Ezhevskii ◽  
Andrey V. Soukhorukov ◽  
Davud V. Guseinov ◽  
Sergey A. Popkov ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Conduction Electron ◽  
Donor Concentration ◽  
G Factor

Donor Concentration Dependence of GaP Luminescence

1993 ◽  
Vol 117-118 ◽  
pp. 375-380 ◽  
Author(s):  
Teresa Monteiro ◽  
E. Pereira ◽  
F. Domingues-Adame ◽  
J. Piqueras
Keyword(s):  
Concentration Dependence ◽  
Donor Concentration

Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence

1971 ◽  
Vol 3 (2) ◽  
pp. 427-433 ◽  
Author(s):  
L. C. Kimerling ◽  
H. M. DeAngelis ◽  
C. P. Carnes
Keyword(s):  
Concentration Dependence ◽  
Donor Concentration ◽  
Type Silicon

Temperature renormalization of the conduction electron g factor in silicon

2013 ◽  
Vol 47 (1) ◽  
pp. 169-173 ◽  
Author(s):  
A. A. Konakov ◽  
V. A. Burdov ◽  
A. A. Ezhevskii ◽  
A. V. Soukhorukov ◽  
D. V. Guseinov ◽  
...  
Keyword(s):  
Conduction Electron ◽  
G Factor

Determination of the sign of the conduction-electron g factor in semiconductor quantum wells by means of the Hanle effect and spin-quantum-beat techniques

1997 ◽  
Vol 39 (4) ◽  
pp. 681-685 ◽  
Author(s):  
V. K. Kalevich ◽  
B. P. Zakharchenya ◽  
K. V. Kavokin ◽  
A. V. Petrov ◽  
P. Le Jeune ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Electron ◽  
Quantum Beat ◽  
G Factor ◽  
Semiconductor Quantum Wells ◽  
Hanle Effect ◽  
Spin Quantum

Conduction electron g-factor measurements in Au using the de Haas-van Alphen effect

1975 ◽  
Vol 20 (5-6) ◽  
pp. 655-675 ◽  
Author(s):  
G. W. Crabtree ◽  
L. R. Windmiller ◽  
J. B. Ketterson
Keyword(s):  
Conduction Electron ◽  
G Factor
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