Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation

1984 ◽  
Vol 29 (4) ◽  
pp. 2010-2020 ◽  
Author(s):  
M. Wittmer ◽  
K. N. Tu
Keyword(s):  
Low Temperature ◽  
Silicide Formation ◽  
Temperature Diffusion ◽  
Dopant Atoms

The Early Stages of Silicide Formation on Metal and Silicon Surfaces, Time-of-Flight Atom-Probe Studies of Atomic Structures and Compositions

1983 ◽  
Vol 25 ◽  
Author(s):  
T. T. Tsong
Keyword(s):  
Low Temperature ◽  
Adsorption Layer ◽  
Depth Profiling ◽  
Atom Probe ◽  
Silicon Surfaces ◽  
Silicide Formation ◽  
Future Directions ◽  
Atomic Structures ◽  
Early Stages ◽  
Temperature Diffusion

ABSTRACTThe early stages of silicide formation on metal and silicon surfaces have been studied in the atom-probe FIM. Precursors to silicide formation are low temperature diffusion of single Si atoms, their interactions, and adsorption layer superstructure formation. These phenomena have been studied quantitatively. At high temperatures, silicide films can be formed. Four distinctive stages of silicide formation on tungsten surfaces have been observed from the atomically resolved FIM images. Formation of silicide layers on platinum, nickel, and silicon surfaces have also been studied. From both the atom-probe compositional depth profiling and the FIM observation one can conclude that the interface formed at low temperature is sharp. At high temperature, Si atoms can diffuse deep into a Pt matrix and Ni atoms into a Si matrix. Conclusions drawn from these atom-probe studies are summarized, and future directions suggested.

Low-Temperature Diffusion of Dopants in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
P. Fahey ◽  
M. Wittmer
Keyword(s):  
Low Temperature ◽  
Transition Metal ◽  
Experimental Evidence ◽  
Point Defects ◽  
Low Temperatures ◽  
Surprising Result ◽  
Temperature Diffusion ◽  
Doped Silicon ◽  
Diffusion Enhancement ◽  
Dopant Atoms

AbstractIt has been reported that diffusion of substitutional dopant atoms in silicon occurs during the formation of transition-metal suicides at temperatures below 300°C. By observing the diffusion enhancements of buried marker layers of Sb-, Ga-, Ge-, and B-doped silicon layers, we provide solid experimental evidence that the diffusion enhancement induced by Pd2Si formation at low temperatures is due to point defects generated by the suicide reactions. Diffusion enhancement is observed at temperatures as low as 200°C. We have found the surprising result that diffusion is asymmetric: diffusion occurs preferentially towards the suiciding interface.

Formation of Pt decorated Ni–Pt nanocubes through low temperature atomic diffusion – time-resolved elemental analysis of nanoparticle formation

Nanoscale ◽  
2015 ◽  
Vol 7 (21) ◽  
pp. 9927-9934 ◽  
Author(s):  
A. Nagao ◽  
K. Higashimine ◽  
J. L. Cuya Huaman ◽  
T. Iwamoto ◽  
T. Matsumoto ◽  
...  
Keyword(s):  
Low Temperature ◽  
Elemental Analysis ◽  
Diffusion Time ◽  
Atomic Diffusion ◽  
Pt Catalysts ◽  
Time Resolved ◽  
Nanoparticle Formation ◽  
The Core ◽  
Temperature Diffusion

Low temperature diffusion of Pt atoms from the core to the corners and edges of the Ni cube results in the preparation of potential novel cage-structured Pt catalysts.

Low temperature diffusion measurements on d.c. sputtered multilayers of Nb/Ta

1984 ◽  
Vol 3 (3) ◽  
pp. 217-220 ◽  
Author(s):  
R. E. Somekh ◽  
Z. H. Barber ◽  
C. S. Baxter ◽  
P. E. Donovan ◽  
J. E. Evetts ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Layer ◽  
Sharp Interface ◽  
Silicide Formation ◽  
Si Substrate ◽  
Metal Thickness ◽  
Substrate Doping

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

Low-temperature diffusion of phosphorus in silicon

1988 ◽  
Vol 31 (9) ◽  
pp. 737-740 ◽  
Author(s):  
A. N. Gorban' ◽  
V. A. Gorodokin
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion ◽  
Phosphorus In Silicon

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 421-426
Author(s):  
Jan Vobecký ◽  
Volodymyr Komarnitskyy ◽  
Vít Záhlava ◽  
Pavel Hazdra
Keyword(s):  
Low Temperature ◽  
Active Sites ◽  
Carrier Lifetime ◽  
High Energy ◽  
Deep Levels ◽  
Radiation Defects ◽  
Metal Atoms ◽  
Temperature Diffusion ◽  
Concentration Enhancement ◽  
Application Potential

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the diodes were implanted with high-energy He2+ to assess, if the radiation defects enhance the concentration of metal atoms at electrically active sites and what is the application potential for carrier lifetime control. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt, Pd and V form deep levels in increased extent at the presence of radiation defects above 600 oC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC 0.203 eV) and donor level V0/+ (EC 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 oC.

scholarly journals Influence of Defects on Low Temperature Diffusion of Boron in SiC

2011 ◽  
Vol 02 (09) ◽  
pp. 1205-1211 ◽  
Author(s):  
Ilkham G. Atabaev ◽  
Tojiddin M. Saliev ◽  
Dilmurad Saidov ◽  
Vadim A. Pak ◽  
Khimmatali Juraev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion
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