Low-Temperature Diffusion of Dopants in Silicon

MRS Proceedings ◽

10.1557/proc-163-529 ◽

1989 ◽

Vol 163 ◽

Cited By ~ 8

Author(s):

P. Fahey ◽

M. Wittmer

Keyword(s):

Low Temperature ◽

Transition Metal ◽

Experimental Evidence ◽

Point Defects ◽

Low Temperatures ◽

Surprising Result ◽

Temperature Diffusion ◽

Doped Silicon ◽

Diffusion Enhancement ◽

Dopant Atoms

AbstractIt has been reported that diffusion of substitutional dopant atoms in silicon occurs during the formation of transition-metal suicides at temperatures below 300°C. By observing the diffusion enhancements of buried marker layers of Sb-, Ga-, Ge-, and B-doped silicon layers, we provide solid experimental evidence that the diffusion enhancement induced by Pd2Si formation at low temperatures is due to point defects generated by the suicide reactions. Diffusion enhancement is observed at temperatures as low as 200°C. We have found the surprising result that diffusion is asymmetric: diffusion occurs preferentially towards the suiciding interface.

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Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.131-133.253 ◽

2007 ◽

Vol 131-133 ◽

pp. 253-258 ◽

Cited By ~ 1

Author(s):

A. Carvalho ◽

R. Jones ◽

C. Janke ◽

Sven Öberg ◽

Patrick R. Briddon

Keyword(s):

Low Temperature ◽

Point Defects ◽

Electron Irradiation ◽

First Principles ◽

Low Temperatures ◽

Damage Evolution ◽

Room Temperature ◽

Temperature Electron ◽

Conductivity Loss

The properties of point defects introduced by low temperature electron irradiation of germanium are investigated by first-principles modeling. Close Frenkel pairs, including the metastable fourfold coordinated defect, are modelled and their stability is discussed. It is found that damage evolution upon annealing below room temperature can be consistently explained with the formation of correlated interstitial-vacancy pairs if the charge-dependent properties of the vacancy and self-interstitial are taken into account. We propose that Frenkel pairs can trap up to two electrons and are responsible for conductivity loss in n-type Ge at low temperatures.

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Magnon drag and the low temperature thermopower of GeMnTe

Canadian Journal of Physics ◽

10.1139/p78-064 ◽

1978 ◽

Vol 56 (5) ◽

pp. 497-500

Author(s):

A. Cafaro ◽

F. T. Hedgcock ◽

W. B. Muir

Keyword(s):

Low Temperature ◽

Experimental Evidence ◽

Thermoelectric Power ◽

Low Temperatures ◽

Impurity Scattering ◽

Experimental Results ◽

Phonon Drag ◽

Degenerate Semiconductors ◽

Upper Limit

The thermoelectric power of pure GeTe and GeMnTe containing 1 and 5at.% Mn has been measured between 25 and 2.5 K. The manganese doped Ge–Te alloys ferromagnetically order at low temperatures and theoretical estimates of the magnon drag contribution to the thermopower in these degenerate semiconductors is 60 μV/K. When appropriate allowance is made for the effects of impurity scattering on the phonon drag thermopower there appears to be no experimental evidence for a magnon drag contribution to the thermopower of this magnitude. An upper limit for the magnon drag contribution to the thermopower estimated from the experimental results for these materials is 0.5 μV/K.

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Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.11.098 ◽

2017 ◽

Vol 474 ◽

pp. 110-120 ◽

Cited By ~ 3

Author(s):

K. Kobayashi ◽

S. Yamaoka ◽

K. Sueoka ◽

J. Vanhellemont

Keyword(s):

Point Defects ◽

Thermal Equilibrium ◽

Formation Energy ◽

Theoretical Study ◽

Equilibrium Concentration ◽

Silicon Crystals ◽

Doped Silicon ◽

Heavily Doped ◽

Dopant Atoms ◽

Area Of Influence

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Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon

Technical Physics Letters ◽

10.1134/s1063785010080195 ◽

2010 ◽

Vol 36 (8) ◽

pp. 741-744 ◽

Cited By ~ 10

Author(s):

M. K. Bakhadyrkhanov ◽

K. S. Ayupov ◽

Kh. M. Iliev ◽

G. Kh. Mavlonov ◽

O. É. Sattorov

Keyword(s):

Low Temperature ◽

Electric Field ◽

Negative Magnetoresistance ◽

Temperature Diffusion ◽

Doped Silicon

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Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation

Physical Review B ◽

10.1103/physrevb.29.2010 ◽

1984 ◽

Vol 29 (4) ◽

pp. 2010-2020 ◽

Cited By ~ 86

Author(s):

M. Wittmer ◽

K. N. Tu

Keyword(s):

Low Temperature ◽

Silicide Formation ◽

Temperature Diffusion ◽

Dopant Atoms

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In situ Tensile Experiments at Low Temperatures on Niobium Single Crystals by H.V.E.M.

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100113913 ◽

1975 ◽

Vol 33 ◽

pp. 58-59

Author(s):

F. H. Louchet ◽

L. P. Kubin

Keyword(s):

Electron Microscope ◽

Transition Temperature ◽

Low Temperature ◽

Slip System ◽

Low Temperatures ◽

Tensile Axis ◽

Image Intensifier ◽

Screw Dislocations ◽

Source Operation

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

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LOW-TEMPERATURE TRANSITION METAL-SEMICONDUCTOR IN CdCr2Se4 SINGLE CRYSTALS DOPED WITH INDIUM AND GALLIUM

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1980526 ◽

1980 ◽

Vol 41 (C5) ◽

pp. C5-155-C5-156 ◽

Cited By ~ 1

Author(s):

T. G. Aminov ◽

K. P. Below ◽

V. T. Kalinnikov ◽

L. I. Koroleva ◽

L. N. Tovmasjan

Keyword(s):

Low Temperature ◽

Transition Metal ◽

Single Crystals ◽

Temperature Transition

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INVAR M93

Alloy Digest ◽

10.31399/asm.ad.fe0143 ◽

2008 ◽

Vol 57 (1) ◽

Keyword(s):

Fracture Toughness ◽

Low Temperature ◽

Physical Properties ◽

Tensile Properties ◽

Low Temperatures ◽

Bend Strength ◽

Temperature Performance ◽

Ni Content ◽

Precision Alloys ◽

Ni Alloy

Abstract Invar is an Fe-Ni alloy with 36% Ni content that exhibits the lowest expansion of known metals from very low temperatures up to approximately 230 deg C (445 deg F). Invar M93 is a cryogenic Invar with improved weldability. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and shear and bend strength as well as fracture toughness and fatigue. It also includes information on low temperature performance as well as forming and joining. Filing Code: FE-143. Producer or source: Metalimphy Precision Alloys.

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